Resist material and exposure method
AssigneeSony Corporation
InventorNobuyuki Matsuzawa
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Abstract
An exposure method comprising a step of subjecting a resist layer to selective exposure to an ultraviolet light and forming a predetermined pattern in the resist layer, wherein a polymer material having introduced thereinto a cyclohexane group is used as a polymer material constituting the resist layer wherein all hydrogen atoms bonded to four continuously adjacent carbon atoms in the cyclohexane group are substituted by fluorine atoms. The use of a polymer material having a lowered absorption in the wavelength range of a vacuum ultraviolet (VUV) light in the resist material or resist layer enables a more improved ultra-fine processing than before.
Claims23
A resist material comprising a polymer material having a cyclohexane group as an alicyclic group, wherein all hydrogen atoms bonded to four continuously adjacent carbon atoms in said cyclohexane group are substituted by fluorine atoms.
An exposure method comprising a step of subjecting a resist layer to selective exposure to an ultraviolet light and forming a predetermined pattern in the resist layer, wherein a polymer material having introduced thereinto a cyclohexane group in which all hydrogen atoms bonded to four continuously adjacent carbon atoms are substituted by fluorine atoms as a polymer material constituting said resist layer.
Dependencies are inferred from the claim text.