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US 2003/0118919 A1Published application
Mask set for use in phase shift photolithography technique which is suitable to form random patterns
AssigneeNEC Corporation
InventorMasashi Fujimoto
Life of this patent
Estimating the term…
Abstract
A mask set has a first mask including a shielding region shielding a first pattern-defining light; a second mask including a phase-shifting region having a phase shifter edge and a non-phase-shifting region adjacent to the phase-shifting region on the phase shifter edge. A first phase of the first light portion passing through the phase-shifting region differs from a second phase of the second light portion. The first and second masks are aligned such that the phase shifter edge overlaps on the shielding region.
Claims11
A method of forming a photoresist pattern by a photolithography technique comprising:
- providing a photoresist layer;
- exposing said photoresist layer to a first pattern-defining light using a first mask including a shielding region shielding said first pattern-defining light;
- and
- exposing said photoresist layer to a second pattern-defining light using a second mask including:
- a phase-shifting region having a phase shifter edge, wherein a first light portion of said second pattern-defining light passes through said phase-shifting region, and
- a non-phase-shifting region adjacent to said phase-shifting region on said phase shifter edge, wherein a second light portion of said second pattern-defining light passes through said non-phase-shifting region, and a first phase of said first light portion differs from a second phase of said second light portion, and
- wherein said first and second masks are aligned such that said phase shifter edge overlaps on said shielding region.
4 more elements
A mask set comprising:
- a first mask including:
- a shielding region shielding a pattern-defining light exposed to said first mask;
- and
- a second mask including:
- a phase-shifting region having a phase shifter edge,
- a non-phase-shifting region adjacent to said phase-shifting region in said phase shifter edge, wherein a first phase of a first light passing through said phase-shifting region differs from a second phase of a second light passing through said non-phase-shifting region, and
- wherein said phase shifter edge overlaps on said shield region when said first and second masks are aligned.
4 more elements
Dependencies are inferred from the claim text.