Diffusion barrier
OwnerKnut Beekmann, Kathrine Gilesinventors
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Abstract
A barrier limits the diffusion of a metal, such as copper, into an insulating layer. The barrier may take the form of insulating layer made of a silicon carbide type material which has been exposed to ionised hydrogen subsequent to deposition. Preferably the material contains nitrogen and it is particularly preferred that the material has a dielectric constant of 3.5 or less.
Claims26
A copper diffusion barrier comprising a layer of silicon carbide type insulating material, the layer having a thickness of 100 nanometers or less, a dielectric constant of 3.5 or less, and containing nitrogen and hydrogen.
A dielectric assembly comprising a dielectric layer and a metal diffusion barrier located over a surface of the dielectric layer, wherein the metal diffusion barrier includes a layer of silicon carbide type insulating material, the layer having a thickness of 100 nanometers or less, a dielectric constant of 3.5 or less, and containing nitrogen and hydrogen.
A metal diffusion barrier comprising a layer of silicon carbide type insulating material which has been exposed to a hydrogen containing plasma subsequent to or during deposition of the silicon carbide type insulating material.
A dielectric assembly comprising a dielectric layer and a metal diffusion barrier located over a surface of the dielectric layer, wherein the metal diffusion barrier includes a layer of silicon carbide type insulating material which has been exposed to a hydrogen containing plasma subsequent to or during deposition of the silicon carbide type insulating material.
A dielectric layer comprising a nitrogen-containing silicon carbide material, wherein a surface or surface zone of the layer has been treated to form an integral barrier layer.
A dielectric layer having a surface which has been treated with ionised hydrogen to form a barrier layer.
A method of forming a metal diffusion barrier, comprising depositing a layer by CVD from an organic silane containing precursor and nitrogen, and hydrogen plasma treating the layer subsequent to or during the CVD deposition.
Dependencies are inferred from the claim text.