Method for treating a diamond surface and corresponding diamond surface
AssigneeUniversite Pierre et Marie Curie
InventorsJean-Pierre Briand, Nicolas Bechu, Alix Gicquel, Jocelyn Achard
Life of this patent
Estimating the term…
Abstract
The invention relates to a treatment method of a diamond surface and to a corresponding diamond surface (5A). According to the method, ions are produced, each having at least three positive charges, and a beam of these ions is sent towards a diamond surface in order to make at least one zone of the surface conductive under the effect of said ions. Advantageously, conductive islands (6) are formed with a diameter smaller than 150 nm, then used preferably as one election tank (diameter smaller than 10 nm) or as replenishment reservoirs for cold cathodes. Application to micro-electronics and to the production of cold cathodes.
Claims22
A method for treating a surface (5) wherein:
- ions (40) are produced, each having at least three positive charges, and
- a beam (42) of said ions is sent towards the surface (5), characterised in that the beam (42) is sent towards a diamond surface (5), in order to make at least one zone (6, 7, 9) of the surface (5) conductive under the effect of said ions (40), and in that each ion has a charge, a kinetic energy and an incidence such that it generates local structural modifications of the surface (5), each having a surface area greater than 4 atomic surfaces and preferably 10 atomic surfaces, of said diamond and smaller than 22,500 nm2.
A treatment method according to any of the previous claims, characterised in that local structural modification is performed on a random basis.
A treatment method according to any of the previous claims, characterised in that the diamond surface (5) is a monocrystalline diamond surface.
A treatment method according to any of the previous claims, characterised in that the diamond surface (5) is passivated by an atomic monolayer (4), preferably made of hydrogen or oxygen.
A diamond surface (5A) delineating conductive islands (6) with a diameter greater than 2 and preferably to 3 atomic distances and greater than 10 nm.
Dependencies are inferred from the claim text.