Copper interconnection and the method for fabricating the same

A copper interconnection comprising:

• a barrier metal layer fabricated on an interconnection groove;
• a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer;
• and
• hole reduction impurities added to said Cu to fabricate a solid solution with said Cu in a first interface in order to reduce holes fabricated in said first interface between said Cu or Cu alloy layer and said barrier metal layer.

A copper interconnection comprising:

• a barrier metal layer fabricated on an interconnection groove;
• a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer;
• and
• a hole reduction amorphous layer present in a first interface, in which said Cu is made amorphous, in order to reduce holes fabricated in said first interface between said Cu or Cu alloy layer and said barrier metal layer.

A copper interconnection comprising:

• a barrier metal layer fabricated on an interconnection groove;
• a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer;
• and
• a hole reduction compound layer present in a first interface, in which a compound with said Cu is fabricated, in order to reduce holes fabricated in said first interface between said Cu or Cu alloy layer and said barrier metal layer.

A copper interconnection comprising:

• a barrier metal layer fabricated on an interconnection groove;
• a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer;
• an insulating cap layer fabricated on said Cu or Cu alloy layer to protect and insulate said Cu or Cu alloy layer;
• and
• hole reduction impurities added to said Cu precipitated in a second interface in order to reduce holes fabricated in said second interface between said Cu or Cu alloy layer and said insulating cap layer.

A copper interconnection comprising:

• a barrier metal layer fabricated on an interconnection groove;
• a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer;
• an insulating cap layer fabricated on said Cu or Cu alloy layer to protect and insulate said Cu or Cu alloy layer;
• and
• hole reduction impurities added to said Cu to fabricate a solid solution with said Cu in a second interface in order to reduce holes fabricated in said second interface between said Cu or Cu alloy layer and said insulating cap layer.

A copper interconnection comprising:

• a barrier metal layer fabricated on an interconnection groove;
• a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer;
• an insulating cap layer fabricated on said Cu or Cu alloy layer to protect and insulate said Cu or Cu alloy layer;
• and
• a hole reduction amorphous layer present in a second interface, in which said Cu is made amorphous, in order to reduce holes fabricated in said second interface between said Cu or Cu alloy layer and said insulating cap layer.

A copper interconnection comprising:

• a barrier metal layer fabricated on an interconnection groove;
• a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer;
• an insulating cap layer fabricated on said Cu or Cu alloy layer to protect and insulate said Cu or Cu alloy layer;
• and
• a hole reduction compound layer present in a second interface, in which a compound with said Cu is fabricated, in order to reduce holes fabricated in said second interface between said Cu or Cu alloy layer and said insulating cap layer.

A method for manufacturing a copper interconnection, comprising:

• a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;
• a hole reduction impurity fabricating step(A) of ion-implanting hole reduction impurities in said barrier metal in order to reduce holes fabricated in a first interface between a Cu or Cu alloy layer for an interconnection and said barrier metal layer after said barrier metal sputtering step, and executing heat treatment;
• a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said hole reduction impurity fabricating step(A);
• a Cu depositing step of depositing Cu which makes an interconnection on said seed Cu after said seed Cu sputtering step;
• and,
• thereby making said hole reduction impurities precipitate in said vicinity of said first interface.

A method for manufacturing a copper interconnection, comprising:

• a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;
• a hole reduction impurity fabricating step(B) of depositing hole reduction impurities by a solid phase in order to reduce holes fabricated in a first interface between a Cu or Cu alloy layer for an interconnection and said barrier metal layer after said sputtering step, and diffusing said impurities by heat;
• a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said hole reduction impurity fabricating step(B);
• a Cu depositing step of depositing Cu which makes an interconnection on said seed Cu after said seed Cu sputtering step;
• and,
• thereby making said hole reduction impurities precipitate in said vicinity of said first interface.

A method for manufacturing a copper interconnection, comprising:

• a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;
• a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said barrier metal sputtering step;
• a hole reduction impurity fabricating step(A) of ion-implanting hole reduction impurities in said barrier metal in order to reduce holes fabricated in a first interface between a Cu or Cu alloy layer for an interconnection and said barrier metal layer after said seed Cu sputtering step, and executing heat treatment;
• a Cu depositing step of depositing Cu which makes an interconnection on said seed Cu after said hole reduction impurity fabricating step(A);
• and,
• thereby making said hole reduction impurities precipitate in said vicinity of said first interface.

A method for manufacturing a copper interconnection, comprising:

• a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;
• a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said barrier metal sputtering step;
• a Cu interconnection fabricating step of embedding a Cu or Cu alloy layer in said interconnection groove after said seed Cu sputtering step, and fabricating an interconnection by using CMP method;
• a hole reduction impurity fabricating step(C) of ion-implanting hole reduction impurities in order to reduce holes fabricated in a second interface between said Cu or Cu alloy layer and an insulating cap layer fabricated on said Cu or Cu alloy layer to insulate and protect said Cu or Cu alloy layer after said Cu interconnection fabricating step, and executing heat treatment;
• a natural oxide layer removing step of removing a natural oxide layer of said Cu by executing treatment such as cleaning and/or plasma irradiation on a surface of said interconnection after said second hole reduction impurity fabricating step;
• an insulating cap layer sputtering deposition step of depositing said insulating cap layer by sputtering after said natural oxide layer removing step;
• and,
• thereby making said hole reduction impurities precipitate in said vicinity of said second interface.

A method for manufacturing a copper interconnection, comprising:

• a barrier metal sputtering step of sputtering barrier metal ion an interconnection groove;
• a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said barrier metal sputtering step;
• a Cu interconnection fabricating step of embedding a Cu or Cu alloy layer in said interconnection groove after said seed Cu sputtering step, and fabricating an interconnection by using CMP method;
• a hole reduction impurity fabricating step(D) of depositing hole reduction impurities by a solid phase in order to reduce holes fabricated in a second interface between said Cu or Cu alloy layer and an insulating cap layer fabricated on said Cu or Cu alloy layer to insulate and protect said Cu or Cu alloy layer after said Cu interconnection fabricating step, and executing heat treatment;
• a natural oxide layer removing step of removing a natural oxide layer of said Cu by executing treatment such as cleaning and/or plasma irradiation on a surface of said interconnection after said second hole reduction impurity fabricating step;
• an insulating cap layer sputtering deposition step of depositing said insulating cap layer by sputtering after said natural oxide layer removing step;
• and
• thereby making said hole reduction impurities precipitate in said vicinity of said second interface.

A method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in a manufacturing process of said copper interconnection, said process comprising:

• a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;
• a hole reduction impurity fabricating step(A) of ion-implanting hole reduction impurities in said barrier metal in order to reduce holes fabricated in a first interface between a Cu or , Cu alloy layer for an interconnection and said barrier metal layer after said barrier metal sputtering step, and executing heat treatment;
• a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said hole reduction impurity fabricating step(A);
• a Cu depositing step of depositing Cu which makes an interconnection on said seed Cu after said seed Cu sputtering step;
• and,
• thereby making said hole reduction impurities precipitate in said vicinity of said first interface.

A method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in a manufacturing process of said copper interconnection, said process comprising:

• a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;
• a hole reduction impurity fabricating step(B) of depositing hole reduction impurities by a solid phase in order to reduce holes fabricated in a first interface between a Cu or Cu alloy layer for an interconnection and said barrier metal layer after said sputtering step, and diffusing said impurities by heat;
• a hole reduction impurity fabricating step of implanting ions in said barrier metal to execute heat treatment;
• a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said hole reduction impurity fabricating step(B);
• a Cu depositing step of depositing Cu which makes an interconnection on said seed Cu after said seed Cu sputtering step;
• and
• thereby making said hole reduction impurities precipitate in said vicinity of said first interface.

A method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on the lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in a manufacturing process of said copper interconnection, said process comprising:

• a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;
• a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said barrier metal sputtering step;
• a hole reduction impurity fabricating step(A) of ion-implanting hole reduction impurities in said barrier metal in order to reduce holes fabricated in a first interface between a Cu or Cu alloy layer for an interconnection and said barrier metal layer after said seed Cu sputtering step, and executing heat treatment;
• a Cu depositing step of depositing Cu which makes an interconnection on said seed Cu after said hole reduction impurity fabricating step(A);
• and
• thereby making said hole reduction impurities precipitate in said vicinity of said first interface.

A method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on the lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in a manufacturing process of said copper interconnection, said process comprising:

• a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;
• a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said barrier metal sputtering step;
• a Cu interconnection fabricating step of embedding a Cu or Cu alloy layer in said interconnection groove after said seed Cu sputtering step, and fabricating an interconnection by using CMP method;
• a hole reduction impurity fabricating step(C) of ion-implanting hole reduction impurities in order to reduce holes fabricated in a second interface between said Cu or Cu alloy layer and an insulating cap layer fabricated on said Cu or Cu alloy layer to insulate and protect said Cu or Cu alloy layer after said Cu interconnection fabricating step, and executing heat treatment;
• a natural oxide layer removing step of removing a natural oxide layer of said Cu by executing treatment such as cleaning and/or plasma irradiation on a surface of said interconnection after said second hole reduction impurity fabricating step;
• an insulating cap layer sputtering deposition step of depositing said insulating cap layer by sputtering after said natural oxide layer removing step;
• and
• thereby making said hole reduction impurities precipitate in said vicinity of said first interface.

A method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on the lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in a manufacturing process of said copper interconnection, said process comprising:

• a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;
• a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said barrier metal sputtering step;
• a Cu interconnection fabricating step of embedding a Cu or Cu alloy layer in said interconnection groove after said seed Cu sputtering step, and fabricating an interconnection by using CMP method;
• a hole reduction impurity fabricating step(D) of depositing hole reduction impurities by a solid phase in order to reduce holes fabricated in a second interface between said Cu or Cu alloy layer and an insulating cap layer fabricated on said Cu or Cu alloy layer to insulate and protect said Cu or Cu alloy layer after said Cu interconnection fabricating step, and executing heat treatment;
• a natural oxide layer removing step of removing a natural oxide layer of said Cu by executing treatment such as cleaning and/or plasma irradiation on a surface of said interconnection after said second hole reduction impurity fabricating step;
• an insulating cap layer sputtering deposition step of depositing said insulating cap layer by sputtering after said natural oxide layer removing step;
• and,
• thereby making said hole reduction impurities precipitate in said vicinity of said second interface.