Method for fabricating a multi-layered dielectric layer including insulating layer having Si-CH3 bond therein

A multi-layered dielectric layer, comprising:

• a first insulating layer formed on conductive patterns of a semiconductor substrate, the first insulating layer having Si—CH3 bonds therein;
• a buffer layer formed on the first insulating layer, the buffer layer does not include Si—CH3 bonds therein and is formed so that a dipole-dipole interaction occurs between the first insulating layer and the buffer layer;
• and
• a second insulating layer formed on the buffer layer.

A method for forming a multi-layered dielectric layer, comprising:

• forming a first insulating layer on conductive patterns of a semiconductor substrate, the first insulating layer having Si—CH3 bonds;
• forming an adhesion surface on a surface of the first insulating layer by treating the first insulating layer with plasma, the adhesion surface having a smaller quantity of carbon components than the first insulating layer;
• and
• forming a second insulating layer on the adhesion surface so that a dipole-dipole interaction occurs between the adhesion surface and the second insulating layer.

A method of forming a multi-layered dielectric layer, comprising:

• forming a first insulating layer including Si—CH3 bonds on conductive patterns of a semiconductor substrate;
• forming a buffer layer on the first insulating layer so that a dipole-dipole interaction occurs between the first insulating layer and the buffer layer, the buffer layer does not have Si—CH3 bonds therein;
• and
• forming a second insulating layer on the buffer layer.