Silicon oxide film formation method

A silicon oxide film formation method using a CVD system and generating plasma in a vacuum container of the said CVD system to produce products in the said vacuum container, and forming a film on a substrate by the said products and material gas, in which the inside of the vacuum container of the said CVD system is separated into two compartments by a conductive partition plate, and one of the two separated compartments is formed as a plasma generating space containing a high frequency electrode, and the other compartment is formed as a film forming space containing a substrate holding mechanism for mounting substrates, and said conductive partition plate has plural penetration holes for communicating between said plasma generating space and film forming space, and the said conductive partition plate also has an inner space separated from the plasma generating space and communicating with the film forming space through plural diffusion holes;

• wherein,
• the material gas supplied from outside into the inner space of the conductive partition plate is introduced into the film forming space through said plural diffusion holes,
• a high frequency electric power is applied to said high frequency electrode to generate a plasma discharge in the plasma generating space, and the products produced by the plasma in the plasma generating space are introduced into the film forming space through the plural penetration holes in the conductive partition plate, and
• a film is formed on the substrate in the film forming space by the introduced products and material gas;
• characterized that,
• during formation of the silicon oxide film, oxygen atom containing gas and nitrogen atom containing gas are introduced into the plasma generating space for generating the plasma discharge by applying the high frequency power to the high frequency electrode.