Apparatus for manufacturing GaN substrate and manufacturing method thereof

An apparatus for manufacturing a GaN substrate, comprising:

• a chamber for loading a substrate therein;
• a heating means heating the chamber;
• a Ga boat installed inside the chamber to receive a Ga molecule producing material;
• an injection pipe spraying a nitrogen molecule producing gas on the Ga boat;
• a transparent window at a bottom of the chamber to apply a laser beam to the substrate in the chamber;
• an auxiliary chamber at a lateral side of the chamber to keep the substrate in store temporarily;
• a gate valve closing/opening a path between the chamber and the auxiliary chamber;
• and
• a bellows at a lateral side of the auxiliary chamber to maintain a vacuum state inside the auxiliary chamber.

An apparatus for manufacturing a GaN substrate, comprising:

• a chamber for loading a substrate therein;
• a heating means heating the chamber;
• a Ga boat installed inside the chamber to receive a Ga molecule producing material;
• an injection pipe spraying a nitrogen molecule producing gas on the Ga boat;
• a transparent window at an upper portion of the chamber to apply a laser beam to the substrate in the chamber;
• an auxiliary chamber at a lateral side of the chamber to keep the substrate in store temporarily;
• a gate valve closing/opening a path between the chamber and the auxiliary chamber;
• a bellows at a lateral side of the auxiliary chamber to maintain a vacuum state inside the auxiliary chamber;
• and
• a holder moving the substrate horizontally and vertically, the holder turning the substrate.

A method of manufacturing a GaN substrate, comprising the steps of:

• disposing a substrate on a predetermined area in a chamber having a Ga molecule producing material inside;
• heating the chamber;
• forming a GaN layer on the substrate by injecting a nitrogen molecule producing gas in the chamber;
• and
• separating the GaN layer from the substrate by applying a laser beam to the substrate through a transparent window at a bottom of the chamber.

A method of manufacturing a GaN substrate, comprising the steps of:

• disposing a substrate on a predetermined area in a chamber having a Ga molecule producing material inside;
• heating the chamber;
• forming a GaN layer on the substrate by injecting a nitrogen molecule producing gas in the chamber;
• arranging the substrate to have a bottom of the substrate confront a transparent window at an upper portion of the chamber;
• and
• separating the GaN layer from the substrate by applying a laser beam to the substrate through the transparent window.