Laser and method for production thereof
AssigneeRiken
InventorsXinwei Zhao, Shuji Komuro, Hideo Isshiki, Yoshinobu Aoyagi, Takuo Sugano
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Abstract
The invention provides a laser and a method for the production thereof by which it is possible to fabricate a device on a Si substrate, and to fabricate further an optical device such as an optical memory on the Si substrate. The laser has an Er-doped nano-ultrafine crystalline Si waveguide formed on the Si substrate wherein the Er-doped nano-ultrafine crystalline Si layer is co-doped with oxygen to result in a structure in which Er ion is surrounded by at least one or more oxygen atom(s).
Claims7
A laser having an Er-doped nano-ultrafine crystalline Si waveguide formed on a Si substrate, wherein:
- said Er-doped nano-ultrafine crystalline Si layer is co-doped with oxygen, so that the resulting structure is such that Er ion is surrounded by at least one or more oxygen atom(s).
A laser having an oxide film layer formed on a Si substrate and an optical waveguide made of an Er-doped nano-ultrafine crystalline Si film layer formed in said oxide film, wherein:
- said Er-doped nano-ultrafine crystalline Si layer is co-doped with oxygen, so that the resulting structure is such that Er ion is surrounded by at least one or more oxygen atom(s).
A laser having a waveguide containing p-n junction of an Er-doped nano-ultrafine crystalline Si, wherein:
- said Er-doped nano-ultrafine crystalline Si layer is co-doped with oxygen, so that the resulting structure is such that Er ion is surrounded by at least one or more oxygen atom(s).
A method for the production of a laser in which:
- a striped structure of an Er-doped nano-ultrafine crystalline Si film layer is fabricated on an oxide film layer formed on a Si substrate,
- an oxide film layer is deposited on said striped structure of the Er-doped nano-ultrafine crystalline Si film layer, and
- cleavage is applied to said striped structure after the deposition of the oxide film layer on said striped structure was completed to define an optical waveguide, wherein:
- said Er-doped nano-ultrafine crystalline Si layer is co-doped with oxygen, so that the resulting structure is such that Er ion is surrounded by at least one or more oxygen atom(s).
Dependencies are inferred from the claim text.