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US 2003/0117869 A1Published application
Thin film magnetic memory device writing data with bidirectional current
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorHideto Hidaka
Life of this patent
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Abstract
An end of a selected bit line in a selected column is electrically coupled to an end of a corresponding current return line by one of first and second write column select gates, which are selectively turned on in response to results of column selection. A data write circuit sets the other end of the selected bit line and the other end of the current return line to one and the other of a power supply voltage and a ground voltage in accordance with a level of write data via one of first and second data buses and an inverted data bus, respectively.
Claims6
A thin film magnetic memory device comprising:
- a plurality of memory cells arranged in rows and columns, and each storing data written in response to application of first and second data write magnetic fields;
- a plurality of write word lines provided corresponding to said rows for passing, in a predetermined direction, a first data write current producing said first data write magnetic field in a selected row, respectively;
- a plurality of bit lines provided corresponding to said columns for passing, in a direction in accordance with a write data, a second data write current producing said second data write magnetic field in a selected column, respectively;
- a plurality of first column select lines each provided for every K columns (K:
- integer larger than one) corresponding to different column addresses, respectively, and every K columns forming one column block;
- second column select lines of K in number for selecting one of the corresponding K columns of in number in each said column block;
- a column decoder for selectively activating one of said plurality of first column select lines and one of said second column select lines of K in number in accordance with results of the column selection;
- and
- a data write circuit for operating in accordance with said first and second column select lines to set one and the other end portions of selected one of said bit lines corresponding to said selected column to one and the other of first and second voltages in accordance with a level of said write data, respectively.
6 more elements
A thin film magnetic memory device comprising:
- a plurality of memory cells arranged in rows and columns, and each storing data written in response to application of first and second data write magnetic fields;
- a plurality of write word lines provided corresponding to said rows for passing, in a predetermined direction, a first data write current producing said first data write magnetic field in a selected row, respectively;
- a plurality of bit lines provided corresponding to said columns for passing, in a direction in accordance with a level of a write data, a second data write current producing said second data write magnetic field in a selected column, respectively;
- and
- a write word line drive circuit for passing said first data write current through at least a portion of selected one of said write word lines corresponding to a selected row, wherein
- said write word line drive circuit sets two nodes among a first node corresponding to one end portion, a second node corresponding to the other end portion and at least one intermediate node, of the selected write word line, and located on the opposite sides of a selected memory cell, to one and the other of first and second voltages, respectively.
3 more elements
A thin film magnetic memory device comprising:
- a plurality of memory cells arranged in rows and columns, and each storing data written in response to application of first and second data write magnetic fields;
- a plurality of write word lines provided corresponding to said rows for passing a first data write current producing said first data write magnetic field in a selected row, respectively,
- each of said write word lines being connected via an intermediate node to a first voltage;
- a plurality of bit lines provided corresponding to said columns for passing, in a direction in accordance with a write data, a second data write current producing said second data write magnetic field in a selected column, respectively;
- and
- a write word line drive circuit for passing said first data write current through at least a portion of selected one of said write word lines corresponding to said selected row, wherein
- said write word line drive circuit includes first and second drive switches provided for each of said rows, and arranged at a first node on one end side and a second node on the other end side, of corresponding one of said write word lines, respectively, and
- one selected from said first and second drive switches in said selected row in accordance with a positional relationship between said selected memory cell and said intermediate node connects the corresponding node to a second voltage.
5 more elements
Dependencies are inferred from the claim text.