NAND-type flash memory device with multi-page program, multi-page read, multi-block erase operations
AssigneeSamsung Electronics Co., Ltd.
InventorsYeong-Taek Lee, Young-Ho Lim
Life of this patent
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Abstract
A NAND-type flash memory device includes a plurality of row selectors each corresponding to memory blocks of each mat therein. Each of the row selectors selects a corresponding memory block in response to block selection information. A decoding circuit and a register are supplied to each of the row selectors. The decoding circuit generates a block selection signal in response to the block selection information, and the register stores an output of the decoding circuit when a latch signal of a corresponding mat is activated. According to the above row selection construction, all mats or a part of memory blocks can be selected at the same time.
Claims5
A NAND-type flash memory device comprising:
- a plurality of mats each including a plurality of memory blocks,
- wherein each of the memory blocks includes a plurality of memory cells arranged in a matrix of rows and columns;
- a plurality of row selectors each corresponding to the memory blocks of the respective mats and each selecting a corresponding memory block in response to block selection information;
- a plurality of page buffer circuits corresponding to the plurality of mats and each sensing data from a selected memory block of a corresponding mat through columns of a selected memory block and transferring data to be programmed to the columns of the selected memory block;
- a plurality of column selectors corresponding to the plurality of mats and each partially selecting the columns of the selected memory block;
- a plurality of pass/fail check circuits corresponding to the plurality of mats and each determining whether data transferred from a corresponding buffer circuit through a column selector is pass data;
- a plurality of reset signal generators corresponding to the plurality of mats and generating a first reset signal of a corresponding mat when the transferred data is the pass data;
- and
- a latch signal generator for selecting one of the mats in response to mat selection information,
- wherein each of the row selectors includes:
- a decoding circuit for generating a block selection signal in response to the block selection information;
- a register for storing an output of the decoding circuit when a latch signal of a corresponding mat is activated;
- a first switch for transferring a high voltage to a block wordline when a value latched by the register indicates that a corresponding memory block is selected, the first switch being coupled to the block wordline;
- a second switch for transferring wordline voltages to rows of a corresponding memory block in response to the high voltage on the block wordline;
- and
- a reset circuit for resetting the register when the first reset signal is activated.
Dependencies are inferred from the claim text.