Flash memory device
AssigneeHynix Semiconductor Inc.
InventorSeok Jin Joo
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Abstract
The present invention relates to a flash memory device. The flash memory device comprises a first flash memory cell array in which a plurality of flash memory cells are connected by a plurality of word lines and a plurality of bit lines, a plurality of switching means connected to bit lines of each of the flash memory cell array, and a second flash memory cell array in which a plurality of flash memory cells are connected by a plurality of word lines and a plurality of bit lines, and a common terminal of the plurality of the switching means and each of the word lines are connected. Therefore, the present invention can reduce the manufacturing cost of a product without increasing the chip size even though a self-converged erase mode is employed.
Claims2
A flash memory device, comprising:
- a first flash memory cell array in which a plurality of flash memory cells are connected by a plurality of word lines and a plurality of bit lines;
- a plurality of switching means connected to bit lines of each of the first flash memory cell array;
- and
- a second flash memory cell array in which a plurality of flash memory cells are connected by a plurality of word lines and a plurality of bit lines, and a common terminal of the plurality of the switching means and each of the word lines are connected.
Dependencies are inferred from the claim text.