Non-volatile semiconductor memory and method of operating the same
AssigneeSharp Kabushiki Kaisha
InventorYoshimitsu Yamauchi
Life of this patent
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Abstract
A method of writing data into a non-volatile semiconductor memory having a plurality of memory cells in which a word line is shared by memory cells and a bit line is shared by adjacent memory cells, the method including writing the data into memory cells connected to the same word line sequentially from a memory cell at one end to a memory cell at another end.
Claims19
A method of writing data into a non-volatile semiconductor memory having a plurality of memory cells in which a word line is shared by memory cells and a bit line is shared by adjacent memory cells,
- the method comprising writing the data into memory cells connected to the same word line sequentially from a memory cell at one end to a memory cell at another end.
A non-volatile semiconductor memory comprising a plurality of memory cells arranged in matrix, of which those aligned in a row direction are divided into two or more segments,
- wherein gates of the memory cells aligned in the row direction are connected to the same word line,
- sources and drains of memory cells aligned in a column direction are connected to the same bit lines, respectively,
- in the same segment, bit lines are shared by memory cells adjacent in the row direction, respectively, and
- the bit lines in each segment are electrically separated from the bit lines in other segment.
Dependencies are inferred from the claim text.