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US 2003/0117840 A1Published application
Magnetic memory device having soft reference layer
AssigneeHewlett-Packard Development Company, L.P.
InventorsManish Sharma, Thomas C. Anthony, Lung Tran
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Abstract
A magnetic memory device includes first and second ferromagnetic layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions. The first ferromagnetic layer has a higher coercivity than the second ferromagnetic layer. The magnetic memory device further includes a structure for forming a closed flux path with the second ferromagnetic layer.
Claims26
A magnetic memory device comprising:
- first and second ferromagnetic layers, each ferromagnetic layer having a magnetization that can be oriented in either of two directions, the first ferromagnetic layer having a higher coercivity than the second ferromagnetic layer;
- and
- a structure for forming a closed flux path with the second ferromagnetic layer.
A device comprising:
- a magnetic tunnel junction including first and second ferromagnetic layers;
- and
- means for forming a closed flux path with one of the ferromagnetic layers.
A structure for a magnetic memory device including a ferromagnetic layer, the structure comprising:
- an electrical conductor;
- and
- ferromagnetic cladding on the conductor, the ferromagnetic cladding forming a closed flux path with the ferromagnetic layer.
A data storage device comprising:
- an array of magnetic memory cells, each memory cell including a data ferromagnetic layer and a reference ferromagnetic layer;
- a plurality of first traces extending in a first direction, each first trace in contact with a group of data layers;
- and
- a plurality of structures extending in a second direction, each structure forming closed flux paths with a group of reference layers.
1 more element
Dependencies are inferred from the claim text.