Magnetic random access memory and method of operating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsWan-jun Park, Tae-wan Kim, I-hun Song, Sang-jin Park, Richard J. Gambino
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AssigneeSamsung Electronics Co., Ltd.
InventorsWan-jun Park, Tae-wan Kim, I-hun Song, Sang-jin Park, Richard J. Gambino
Estimating the term…
A magnetic random access memory using magnetic domain drag and giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) and a method of operating the same, wherein the magnetic random access memory includes a data storage unit including a fixed layer, a non-magnetic layer, and a free layer having two ends; a data input means electrically connected to both ends of the free layer, for applying current to the free layer to input data into the data storage unit; and a data output means electrically connected to the free layer and the fixed layer to output data stored in the data storage unit. Accordingly, a magnetic random access memory according to the present invention has superior performance than one using a switching field to record data.
A magnetic random access memory comprising:
A magnetic random access memory array having a matrix structure of unit memory devices each including a data storage unit comprising:
A method of operating a magnetic random access memory array including an array having a matrix structure of unit memory devices each including a data storage unit having a fixed layer, a non-magnetic layer, and a free layer having two ends;
Dependencies are inferred from the claim text.