Magnetic random access memory
AssigneeKabushiki Kaisha Toshiba
InventorsYoshihisa Iwata, Yoshiaki Asao, keiji Hosotani, Junichi Miyamoto
Life of this patent
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Abstract
A read blocks are connected to a read bit line. The read block has MTJ elements connected in series or in parallel, or arranged by combining series and parallel connections between the read bit line and a ground terminal. The MTJ elements are stacked on a semiconductor substrate. The read bit line is arranged on the MTJ elements stacked. A write word line extending in the X-direction and a write bit line extending in the Y-direction are present near the MTJ elements in the read block.
Claims103
A magnetic random access memory comprising:
- memory cells which are stacked on a semiconductor substrate and connected in series to store data using a magnetoresistive effect;
- a bit line which is connected to one terminal of said memory cells;
- a read circuit connected to said bit line;
- a first write line which is used to write data in one of said memory cells and extends in a first direction;
- and
- a second write line which is used to write data in the one of said memory cells and extends in a second direction perpendicular to the first direction.
A magnetic random access memory comprising:
- memory cells which are stacked one another and connected in parallel to store data using a magnetoresistive effect;
- a bit line which is connected to one terminal of said memory cells;
- a read circuit connected to said bit line;
- a first write line which is used to write data in one of said memory cells and extends in a first direction;
- and
- a second write line which is used to write data in the one of said memory cells and extends in a second direction perpendicular to the first direction.
A magnetic random access memory comprising:
- memory cells which are stacked one another and formed by combining series connection and parallel connection to store data using a magnetoresistive effect;
- a bit line which is connected to one terminal of said memory cells;
- a read circuit connected to said bit line;
- a first write line which is used to write data in one of said memory cells and extends in a first direction;
- and
- a second write line which is used to write data in the one of said memory cells and extends in a second direction perpendicular to the first direction.
A manufacturing method of a magnetic random access memory, comprising:
- forming a read select switch on a surface region of a semiconductor substrate;
- forming a first write line extending in a first direction on the read select switch;
- forming a first MTJ element right above the first write line;
- forming a second write line extending in a second direction perpendicular to the first direction right above the first MTJ element;
- forming, right above the second write line, a second MTJ element which is symmetrical to the first MTJ element with respect to the second write line;
- forming a third write line extending in the first direction right above the second MTJ element;
- forming, right above the third write line, a third MTJ element which is symmetrical to the second MTJ element with respect to the third write line;
- forming a fourth write line extending in the second direction right above the third MTJ element;
- forming, right above the fourth write line, a fourth MTJ element which is symmetrical to the third MTJ element with respect to the fourth write line;
- forming a fifth write line extending in the first direction right above the fourth MTJ element;
- and
- forming a read bit line extending on the second direction on the fifth write line.
Dependencies are inferred from the claim text.