Semiconductor integrated circuit
AssigneeNEC Electronics Corporation
InventorMitsuru Yoshida
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Abstract
A semiconductor integrated circuit of the present invention has an output field-effect transistor formed on a main surface of a semiconductor substrate; an overcurrent detection circuit detecting an overcurrent of the output field-effect transistor; and an overcurrent limiting circuit which is connected between the gate electrode terminal and the source electrode terminal of the output field-effect transistor, controls the detected current of the overcurrent detection circuit and varies its output voltage according to variation in threshold voltage of the output field-effect transistor.
Claims5
A semiconductor integrated circuit comprising:
- an output field-effect transistor formed on a main surface of a semiconductor substrate;
- an overcurrent detection circuit detecting an overcurrent of said output field-effect transistor;
- and
- an overcurrent limiting circuit which is connected between the gate electrode terminal and the source electrode terminal of said output field-effect transistor, controls the detected current of said overcurrent detection circuit and varies its output voltage according to variation in threshold voltage of said output field-effect transistor.
Dependencies are inferred from the claim text.