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US 2003/0117219 A1Published application
Multi-band power amplifier
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsKazuya Yamamoto, Satoshi Suzuki
Life of this patent
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Abstract
A final-stage power amplification transistor is formed of unit transistors arranged in a mixed manner in a region in which the final output amplification transistors for a multi-band power amplifier is formed. Furthermore, an inductance element is connected between output signal lines to which the final output stage transistors are coupled. Thus, the final-stage transistors in a dual band power amplifier can be made free from current concentration due to heat generation without impairing inter-band isolation.
Claims12
An amplifier comprising:
- a first output transistor, including a plurality of first unit transistor cells, for outputting a signal of a first frequency band;
- a second output transistor, including a plurality of second unit transistor cells, for outputting a signal of a second frequency band different from said first frequency band;
- and
- an inductance element arranged between an output node of said first output transistor and an output node of said second output transistor.
1 more element
An amplifier comprising:
- a first output transistor having a plurality of unit transistor cells, for outputting a signal of a first frequency band;
- and
- a second output transistor having a plurality of second unit transistor cells arranged such that the first unit transistors and the second transistors surround alternately with each other, for outputting a signal of a second frequency band.
Dependencies are inferred from the claim text.