US 2003/0116853 A1 · Semiconductor device and method of fabricating the same

Abstract

A semiconductor device capable of inhibiting a conductive plug from increase of resistance or disconnection resulting from moisture discharged from a first insulator film while reducing the capacitance between adjacent first interconnection layers is obtained. This semiconductor device comprises a plurality of first interconnection layers formed on a semiconductor substrate at a prescribed interval, a first insulator film, formed to fill up the clearance between the plurality of first interconnection layers, having an opening reaching the first interconnection layers and a conductive plug charged in the opening of the first insulator film and formed to be in contact with the first interconnection layers. An impurity is selectively introduced into a first region of the first insulator film in the vicinity of contact surfaces between the first interconnection layers and the conductive plug, thereby selectively modifying the first region of the first insulator film.

Claims22

Dependent claims

A semiconductor device comprising:

a plurality of first interconnection layers formed on a semiconductor substrate at a prescribed interval;
a first insulator film, formed to fill up the clearance between said plurality of first interconnection layers, having an opening reaching said first interconnection layers;
and
a conductive plug charged in said opening of said first insulator film and formed to be in contact with said first interconnection layers, wherein
an impurity is selectively introduced into a first region of said first insulator film in the vicinity of contact surfaces between said first interconnection layers and said conductive plug thereby selectively modifying said first region of said first insulator film.

2 more elements

A method of fabricating a semiconductor device, comprising steps of:

forming a plurality of first interconnection layers on a semiconductor substrate at a prescribed interval;
forming a first insulator film by a method of application to fill up the clearance between said plurality of first interconnection layers;
forming an opening reaching said first interconnection layers in said first insulator film;
forming a conductive plug to be charged in said opening of said first insulator film and in contact with said first interconnection layers;
and
selectively introducing an impurity into a first region of said first insulator film located in the vicinity of contact surfaces between said first interconnection layers and said conductive plug after forming said first insulator film and before forming said conductive plug thereby selectively modifying said first region of said first insulator film.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method of fabricating the same

Life of this patent

Semiconductor device and method of fabricating the same

Life of this patent

Abstract

Claims22