Memory-module and a method of manufacturing the same

A memory-module comprising:

• protruded terminal semiconductor devices having protruded terminals as external terminals, mounted via the protruded terminals, and are provided with rewirings which are wiring portions for expanding the pitch among the protruded terminals to be wider than the pitch among the bonding electrodes in the areas of semiconductor chips;
• lead terminal semiconductor devices having outer leads as external terminals, and are mounted via the outer leads that are electrically connected to the bonding electrodes of the semiconductor chips;
• and
• a module board supporting the protruded terminal semiconductor devices and the lead terminal semiconductor devices;
• wherein the protruded terminal semiconductor devices and the lead terminal semiconductor devices are mounted in a mixed manner on the module board.

A method of manufacturing a memory-module comprising:

• a step for preparing protruded terminal semiconductor devices having protruded terminals as external terminals, and wiring portions for expanding the pitch of the protruded terminals to be wider than the pitch of the bonding electrodes of semiconductor chips;
• a step for preparing lead terminal semiconductor devices having outer leads which are the external terminals electrically connected to the bonding electrodes of the semiconductor chips;
• a step for arranging the protruded terminal semiconductor devices and the lead terminal semiconductor devices on a module board;
• and
• a step for simultaneously reflowing the protruded terminal semiconductor devices and the lead terminal semiconductor devices to mount them on the module board;
• wherein the protruded terminal semiconductor devices and the lead terminal semiconductor devices are mounted in a mixed manner on the module board.

A method of manufacturing a memory-module comprising:

• a step for preparing protruded terminal semiconductor devices of a chip size having protruded terminals as external terminals, and rewirings which are wiring portions for expanding the pitch of the protruded terminals to be wider than the pitch of the bonding electrodes in the areas of semiconductor chips;
• a step for preparing lead terminal semiconductor devices having outer leads which are the external terminals electrically connected to the bonding electrodes of the semiconductor chips;
• a step for arranging the protruded terminal semiconductor devices and the lead terminal semiconductor devices on a module board;
• and
• a step for simultaneously reflowing the protruded terminal semiconductor devices and the lead terminal semiconductor devices to mount them on the module board;
• wherein the protruded terminal semiconductor devices and the lead terminal semiconductor devices are mounted in a mixed manner on the module board.

A method of manufacturing a memory-module comprising:

• a step for preparing protruded terminal semiconductor devices of a chip size having protruded terminals as external terminals, and rewirings which are wiring portions for expanding the pitch of the protruded terminals to be wider than the pitch of the bonding electrodes in the areas of semiconductor chips;
• a step for preparing lead terminal semiconductor devices having outer leads which are the external terminals electrically connected to the bonding electrodes of the semiconductor chips;
• a step for arranging the protruded terminal semiconductor devices and the lead terminal semiconductor devices on a module board, and reflowing the protruded terminal semiconductor devices and the lead terminal semiconductor devices to mount them on both the front and back surfaces of the module board;
• and
• a step for applying an underfiller resin onto the protruded terminal semiconductor devices on both the front and back surfaces of the module board one surface by one surface to effect the sealing between the semiconductor device bodies of the protruded terminal semiconductor devices and the module board, and heating both the front and back surfaces of the module board at one time to simultaneously cure the resin on both the front and back surfaces;
• wherein the protruded terminal semiconductor devices and the lead terminal semiconductor devices are mounted in a mixed manner on the module board.

A memory-module comprising:

• a board and a plurality of semiconductor devices mounted thereon, the semiconductor devices including protruded terminal semiconductor devices and lead terminal semiconductor devices which are mounted thereon in a mixed manner;
• the protruded terminal semiconductor devices including a semiconductor chip with a plurality of bonding pads on the main surface thereof, wiring portions for expanding the pitch among the bonding pads to be wider than the pitch among the bonding pads, and a plurality of protruded terminals formed at the ends of the wiring portions maintaining a pitch wider than the pitch among the bonding pads, the semiconductor chip being mounted on the board via the protruded terminals;
• and
• the lead terminal semiconductor devices including a semiconductor chip with a plurality of bonding pads on the main surface thereof, a plurality of leads each being constituted by an inner portion and an outer portion, wires for electrically connecting the bonding pads to the inner portions of the leads, and a sealing member for sealing the semiconductor chip, the inner portions and the wires, and the lead terminal semiconductor devices being mounted on the board via the outer portions of the leads protruding beyond the sealing member.

A memory-module comprising:

• a board and a plurality of semiconductor devices mounted thereon, the semiconductor devices including protruded terminal semiconductor devices and lead terminal semiconductor devices which are mounted thereon in a mixed manner;
• the protruded terminal semiconductor devices including a semiconductor chip with a plurality of bonding pads on the main surface thereof, rewirings which are wiring portions for expanding the pitch among the bonding pads to be wider than the pitch among the bonding pads, and a plurality of protruded terminals formed at the ends of the rewirings maintaining a pitch wider than the pitch among the bonding pads on a main surface region of the semiconductor chip, the semiconductor chip being mounted on the board via the protruded terminals;
• and
• the lead terminal semiconductor devices including a semiconductor chip with a plurality of bonding pads on the main surface thereof, a plurality of leads each being constituted by an inner portion and an outer portion, wires for electrically connecting the bonding pads to the inner portions of the leads, and a sealing member for sealing the semiconductor chip, the inner portions and the wires, and the lead terminal semiconductor devices being mounted on the board via the outer portions of the leads protruding beyond the sealing member.