Bipolar transistor

Abstract

A bipolar transistor is provided. The bipolar transistor includes a collector region including a semiconductor substrate doped with a first conductive dopant, an intrinsic base region low-concentration doped with a second conductive dopant on the semiconductor substrate, the second conductive dopant being contrary to the first conductive dopant, an emitter region doped with the first conductive dopant on a first portion of the upper surface of the low-concentration intrinsic base region, an extrinsic base region high-concentration doped with the second conductive dopant on a second portion of the upper surface of the low-concentration intrinsic base region and having a depth between 60% and 100% of the depth of the emitter region, the second portion spaced from the first portion by a designated interval, a collector electrode formed on the lower surface of the semiconductor substrate, an emitter electrode formed on the upper surface of the emitter region, and a base electrode formed on the upper surface of the high-concentration extrinsic base region.

Dependencies are inferred from the claim text.