Photodiode
AssigneeSumitomo Electric Industries, Ltd.
InventorsYoshiki Kuhara, Naoyuki Yamabayashi, Yasuhiro Iguchi
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AssigneeSumitomo Electric Industries, Ltd.
InventorsYoshiki Kuhara, Naoyuki Yamabayashi, Yasuhiro Iguchi
Estimating the term…
A photodiode (A) comprises a substrate, a light receiving layer having a band gap wavelength and including a pn-junction and at least an absorption layer having a band gap wavelength λg. One of the absorption layers is sandwiched between the substrate and the light receiving layer, the band gap wavelength λg of the absorption layer is shorter than the receiving signal wavelength λ2 but longer than noise wavelength λ1(λ1<λg<λ2). Otherwise a photodiode (B) has two absorption layers epitaxially made on the substrate. One absorption layer is formed on the top surface of the substrate. The other absorption layer is formed on the bottom surface of the substrate. The absorption layers annihilate the noise λ1. The PD has no sensitivity to λ1.
A photodiode comprising:
A photodiode comprising:
Dependencies are inferred from the claim text.