Semiconductor device and method for fabricating the same

Abstract

The present invention relates to a semiconductor device and a fabricating method thereof. The fabricating method comprises: forming an insulating film on a silicon substrate; forming a first conductive well of a first conductive type in the silicon substrate; first and second conductive layers of a second conductive type at a portion below the surface of the first conductive well and in the inner region of the first conductive well, respectively; patterning the insulating film and the first conductive layer of the second conductive type, so that contact holes are formed in such a manner that the second conductive layer formed in the inner region of the first conductive well is exposed through the contact holes; forming a gate insulating film on the sidewall of the first conductive well in the contact holes; and forming a gate electrode on the surface of the gate insulating film in the contact holes.

Dependencies are inferred from the claim text.