Semiconductor device with capacitor electrodes

Abstract

A semiconductor device that can prevent short-circuit occurring between capacitor electrodes and a method of manufacturing the semiconductor device are obtained. A semiconductor includes two capacitor electrodes formed spaced from each other and including conductive impurities of the first conductivity type, and an electrode isolation film located between the two capacitor electrodes and formed at the same layer as that of the two capacitor electrodes, while including conductive impurities of the second conductivity type different from the first conductivity type. This allows the two capacitor electrodes to be electrically isolated from each other, without the etching step or the like, by introducing conductive impurities of the second conductivity type into a region that is located between the two capacitor electrodes and is formed at the same layer as that of the capacitor electrodes.

Dependencies are inferred from the claim text.