Semiconductor device having trench capacitor and method for fabricating the same

A method for fabricating a semiconductor device having a trench capacitor, which comprises:

• forming a conductive well in a silicon substrate;
• forming a trench in the conductive well;
• forming a plate electrode on the sidewall of the trench;
• successively depositing a capacitor insulating film and a storage node electrode on the plate electrode;
• forming a first storage node connector on the storage node electrode;
• forming an insulating film on the first storage node connector;
• forming a silicon layer on the entire structure;
• forming word lines on the silicon layer;
• forming source and drain regions in the silicon layer at portions below both sides of the respective word lines;
• forming a contact hole in the silicon layer and the insulating film below the silicon layer, in such a manner that the first storage node connector and the source region are exposed through the contact hole;
• and
• forming a second storage node connector in the contact hole, in such a manner that the source region and the first storage node are connected to each other via the second storage node connector.