US 2003/0116797 A1 · Semiconductor device and fabricating method thereof

Abstract

A semiconductor device and method for fabricating the same. The semiconductor device comprises a capacitor including a semiconductor substrate having a first conductive type well; a first trench formed in the semiconductor substrate; a plate electrode formed on the first trench; a capacitor insulating film formed on the plate electrode; and a storage node electrode formed in the first trench. The transistor includes a first insulating film for planarization formed on the storage node electrode; a second trench formed in the portion of the first conductive type well, which does not correspond to the first trench; a gate insulating film formed on the second trench; a gate electrode formed on the portion of the gate insulating film, located on the second trench; and drain and source regions formed on the upper and lower portions of the first conductive type well, respectively, which corresponds to the sidewall of the second trench.

Claims12

Dependent claims

A semiconductor device comprising a capacitor and a transistor, in which the capacitor includes:

a semiconductor substrate having a first conductive type well formed therein;
a first trench formed in the semiconductor substrate including the first conductive type well;
a plate electrode formed on the surface of the first trench;
a capacitor insulating film formed on the surface of the plate electrode;
and
a storage node electrode formed in the first trench including the capacitor insulating film;
and
the transistor includes:
a first insulating film for planarization formed on the storage node electrode;
a second trench formed in the portion of the first conductive type well, which does not correspond to the first trench;
a gate insulating film formed on the surface of the second trench;
a gate electrode formed on the portion of the gate insulating film, which is located on the sidewall of the second trench;
and
drain and source regions formed on the upper and lower portions of the first conductive type well, respectively, which corresponds to the sidewall of the second trench.

11 more elements

A method for fabricating a semiconductor device, which comprises the steps of:

providing a semiconductor substrate having a first conductive type well formed therein;
forming a first trench in the semiconductor substrate including the first conductive type well;
forming a plate electrode on the surface of the first trench;
forming a capacitor insulating film on the surface of the plate electrode;
forming a storage node electrode in the first trench including the capacitor insulating film;
forming a first insulating film for planarization over the storage node electrode;
forming a second trench in the portion of the first conductive type well, which does not correspond to the first trench;
forming a gate insulating film on the surface of the second trench;
forming a gate electrode on the portion of the gate insulating film, which is located on the sidewall of the second trench;
and
forming drain and source regions on the upper and lower portions of the first conductive type well, respectively, which correspond to the sidewall of the second trench.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor device and fabricating method thereof

Life of this patent

Semiconductor device and fabricating method thereof

Life of this patent

Abstract

Claims12