Method of manufacturing a tantalum pentaoxide - aluminum oxide film and semiconductor device using the film
OwnerKwang Chul Jooinventor
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Abstract
The present invention relates to a method of manufacturing a TA2O5—AL2O3 film and a semiconductor device using the film. Chemical vapor of a Ta component, chemical vapor of an Al component and an excess O2 gas are surface-chemical-reacted within a LPCVD chamber to form a (Ta2O5)1−X—(Al2O3)X film of an amorphous state on a substrate. The (Ta2O5)1−X—(Al2O3)X film of the amorphous state is annealed to form a (Ta2O5)1−X—(Al2O3)X film of a crystal state that has a high dielectric constant and a stable stoichiometry compared to an existing Ta2O5 film. At this time, the crystal (Ta2O5)1−X—(Al2O3)X is applied to the semiconductor device.
Claims27
A method of manufacturing a tantalum pentaoxide-aluminum oxide (TA2O5—AL2O3) film, comprising the steps of:
- forming a lower layer;
- forming an amorphous (Ta2O5)1−X—(Al2O3)X film on the lower layer using chemical vapor of a Ta component, chemical vapor of an Al component and an excess O2 gas;
- and
- annealing the amorphous (Ta2O5)1−X—(Al2O3)X film to form a crystal (Ta2O5)1−X—(Al2O3)X film.
Dependencies are inferred from the claim text.