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US 2003/0116794 A1Published application
Elevated pore phase-change memory
AssigneeOvonyx, Inc.
InventorTyler A. Lowrey
Life of this patent
Estimating the term…
Abstract
An elevated phase-change memory cell facilitates manufacture of phase-change memories by physically separating the fabrication of the phase-change memory components from the rest of the semiconductor substrate. In one embodiment, a contact in the substrate may be electrically coupled to a cup-shaped conductor filled with an insulator. The conductor couples current up to the elevated pore while the insulator thermally and electrically isolates the pore.
Claims30
A method comprising:
- forming a base contact in a semiconductor structure;
- covering said semiconductor structure with a layer;
- forming an electrical connection through said layer to said contact;
- and
- forming a phase-change material over said layer, said material electrically coupled to said contact.
2 more elements
A memory comprising:
- a semiconductor structure;
- a base contact formed on said semiconductor structure;
- an insulating layer over said semiconductor structure;
- a passage formed through said insulating layer, said passage including an electrical connection;
- and
- a phase-change material electrically coupled to said electrical connection.
3 more elements
A memory comprising:
- a semiconductor structure;
- a phase-change material spaced above said semiconductor structure;
- and
- a tubular connector electrically coupling said phase-change material to said semiconductor structure.
1 more element
Dependencies are inferred from the claim text.