Submicron MOSFET having asymmetric channel profile
AssigneeBoard of Regents, The University of Texas System
InventorsXiangdong Chen, Sanjay Kumar Banerjee
Life of this patent
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Abstract
A MOSFET semiconductor device having an asymmetric channel region between the source region and the drain region. In one embodiment, the device comprises a mesa structure on a silicon substrate with the source region being in the substrate and the mesa structure extending from the source region and substrate. The asymmetric channel region can include silicon abutting the source region and a heterostructure material such as Si1-xGex extending to and abutting the drain region. The mole fraction of Ge can increase towards the drain region either uniformly or in steps. In one embodiment, the doping profile of the channel region is non-uniform with higher doping near the source region and lower doping near the drain region.
Claims18
A MOSFET semiconductor device comprising a semiconductor body having a source region of one conductivity type, a drain region of the one conductivity type, a channel region of opposite conductivity type between the source region and the drain region, the channel region being asymmetrical in profile between the source region and the drain region, and a gate for controlling conduction of the channel region.
A MOSFET semiconductor device comprising:
- a) a silicon substrate,
- b) a source region in the substrate of one conductivity type,
- c) a drain region of the one conductivity type,
- d) a channel region of opposite conductivity type between the source region and the drain region, the channel region and the drain region being in a mesa structure extending from the source region and the silicon substrate, the channel region comprising silicon abutting the source region and a heterostructure material abutting the drain region,
- e) a gate insulator abutting the channel region, and
- f) a conductive gate abutting the gate insulator for controlling conduction of the channel region.
Dependencies are inferred from the claim text.