Semiconductor device

Abstract

The present invention provides a semiconductor device having a bipolar transistor constructed so as to allow the adjustment of the base input signal voltage that switches on a transistor in which a diffusion region of a different conductivity type from that of the base region is formed at the contact of the base electrode, and to allow the base current to be controlled when a digital transistor is produced. A base electrode connection region 24 of an n+-type is provided to a p-type base region 12, and a zener voltage control diffusion region 25 of a p+-type is provided around the periphery of the base electrode connection region 24 so as to form a pn junction and undergo zener breakdown at the desired voltage. A resistor 26 composed of polysilicon is connected to the base electrode connection region 24 via a metal electrode 16a. As a result, this semiconductor device has a bipolar transistor in which a zener diode ZD and the resistor 26 are serially built into the base.

Dependencies are inferred from the claim text.