Semiconductor device and its manufacturing method capable of reducing low frequency noise
AssigneeNEC Corporation
InventorHiroshi Mizutani
Life of this patent
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Abstract
In a semiconductor device, a first semiconductor layer is formed on a semiconductor substrate. A second semiconductor layer is formed on a part of the first semiconductor layer, and a third semiconductor layer is formed on a part of the second semiconductor layer. A first electrode is formed on the third semiconductor layer, and a second electrode is formed on the first semiconductor layer in contact with the second semiconductor layer and apart from the semiconductor layer, thus forming a diode.
Claims50
A semiconductor device comprising:
- a semiconductor substrate;
- a first semiconductor layer formed on said semiconductor substrate;
- a second semiconductor layer formed on a part of said first semiconductor layer;
- a third semiconductor layer formed on a part of said second semiconductor layer;
- a first electrode formed on said third semiconductor layer;
- and
- a second electrode formed on said first semiconductor layer in contact with said second semiconductor layer and apart from said third semiconductor layer;
- thus forming a diode.
A semiconductor device comprising:
- a semiconductor substrate;
- a first semiconductor layer formed on said semiconductor substrate;
- a second semiconductor layer formed on a part of said first semiconductor layer;
- a first electrode formed on said second semiconductor layer;
- and
- a second electrode buried in said first semiconductor layer and apart from said second semiconductor layer,
- thus forming a diode.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming first, second and third semiconductor layers on a semiconductor substrate by an epitaxial growing process;
- patterning said third semiconductor layer by an etching process using said second semiconductor layer as an etching stopper;
- patterning said second semiconductor layer by an etching process using said first semiconductor layer as an etching stopper, so that said third semiconductor layer is formed on a part of said second semiconductor layer;
- forming a first electrode on said third semiconductor layer;
- and
- forming a second electrode on said first semiconductor layer adjacent to said second semiconductor layer and apart from said third semiconductor layer,
- thus completing a diode.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming first and second semiconductor layers on a semiconductor substrate by an epitaxial growing process substrate;
- patterning said second semiconductor layer so that said second semiconductor layer is formed on a part of said first semiconductor layer;
- partly etching said first semiconductor layer after said second semiconductor layer is patterned;
- forming a first electrode on said second semiconductor layer;
- and
- burying a second electrode in said first semiconductor layer and apart from said second semiconductor layer,
- thus forming a diode.
Dependencies are inferred from the claim text.