Nitride-based semiconductor light-emitting device and manufacturing method thereof

Abstract

A nitride-based semiconductor light-emitting device includes: a conductive semiconductor substrate having first and second main surfaces; a high resistant or insulative intermediate layer formed on the first main surface of the substrate; a plurality of nitride semiconductor layers of AlxByInzGa1-x-y-zN (0<x≦1, 0≦y<1, 0≦z≦1, x+y+z=1) formed on the intermediate layer, the nitride semiconductor layers including at least one first conductivity type layer, a light-emitting layer and at least one second conductivity type layer sequentially stacked on the intermediate layer; a metal film penetrating through or detouring around the intermediate layer to connect the first conductivity type layer in contact with the intermediate layer to the conductive substrate; a first electrode formed on the second conductivity type layer; and a second electrode formed on the second main surface of the substrate. Voltage drop in the intermediate layer is avoided by the metal film, so that an operating voltage is reduced.

Dependencies are inferred from the claim text.