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US 2003/0116772 A1Published application
Light emitting device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Toshimitsu Konuma, Hiroko Yamazaki
Life of this patent
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Abstract
In an active matrix type light emitting device, a top surface exit type light emitting device in which an anode formed at an upper portion of an organic compound layer becomes a light exit electrode is provided. In a light emitting element made of a cathode, an organic compound layer and an anode, a protection film is formed in an interface between the anode that is a light exit electrode and the organic compound layer. The protection film formed on the organic compound layer has transmittance in the range of 70 to 100%, and when the anode is deposited by use of the sputtering method, a sputtering damage to the organic compound layer can be inhibited from being inflicted.
Claims36
A light emitting device comprising:
- a thin film transistor formed over an insulating surface;
- an interlayer insulating film formed over the thin film transistor;
- a pixel electrode formed on the interlayer insulating film;
- an insulating film covering at least one edge portion of the pixel electrode;
- a cathode formed on at least the pixel electrode;
- an organic compound layer formed on at least the cathode;
- a protective film formed on at least the organic compound layer;
- and
- an anode formed on at least the protective film;
- wherein the thin film transistor comprises a source region and a drain region, and the pixel electrode is electrically connected to either one of the source region or the drain region in an opening formed in the interlayer insulating film,
- wherein a mixture region is formed between the organic compound layer and the protection film, and
- wherein the mixture region comprises an organic compound that constitutes the organic compound layer and a metal that constitutes the protection film.
9 more elements
A light emitting device comprising:
- a thin film transistor formed over an insulating surface;
- an interlayer insulating film formed over the thin film transistor;
- a pixel electrode formed on the interlayer insulating film;
- an insulating film covering at least one edge portion of the pixel electrode;
- a cathode formed on at least the pixel electrode;
- an organic compound layer formed on at least the cathode;
- a protective film formed on at least the organic compound layer;
- and
- an anode formed on at least the protective film;
- wherein the thin film transistor comprises a source region and a drain region, and the pixel electrode is electrically connected to either one of the source region or the drain region in an opening formed in the interlayer insulating film,
- wherein a mixture region is formed between the organic compound layer and the protection film, and
- wherein the mixture region comprises an organic compound that constitutes the organic compound layer and a metal that constitutes the protection film, and has an average film thickness in the range of 0.5 to 10 nm.
9 more elements
A light emitting device comprising:
- a thin film transistor formed over an insulating surface;
- an interlayer insulating film formed over the thin film transistor;
- a barrier film formed over the interlayer insulating film;
- a pixel electrode formed over the barrier film;
- an insulating film covering at least one edge portion of the pixel electrode;
- a cathode formed on at least the pixel electrode;
- an organic compound layer formed on at least the cathode;
- a protective film formed on at least the organic compound layer;
- and
- an anode formed on at least the protective film;
- wherein the thin film transistor comprises a source region and a drain region, and the pixel electrode is electrically connected to either one of the source region or the drain region in an opening formed in the interlayer insulating film,
- wherein a mixture region is formed between the organic compound layer and the protection film, and
- wherein the mixture region comprises an organic compound that constitutes the organic compound layer and a metal that constitutes the protection film.
10 more elements
A light emitting device comprising:
- a thin film transistor formed over an insulating surface;
- an interlayer insulating film formed over the thin film transistor;
- a barrier film formed over the interlayer insulating film;
- a pixel electrode formed over the barrier film;
- an insulating film covering at least one edge portion of the pixel electrode;
- a cathode formed on at least the pixel electrode;
- an organic compound layer formed on at least the cathode;
- a protective film formed on at least the organic compound layer;
- and
- an anode formed on at least the protective film;
- wherein the thin film transistor comprises a source region and a drain region, and the pixel electrode is electrically connected to either one of the source region or the drain region in an opening formed in the interlayer insulating film,
- wherein a mixture region is formed between the organic compound layer and the protection film, and
- wherein the mixture region comprises an organic compound that constitutes the organic compound layer and a metal that constitutes the protection film, and has an average film thickness in the range of 0.5 to 10 nm.
10 more elements
A light emitting device comprising:
- a thin film transistor formed over an insulating surface;
- an interlayer insulating film formed over the thin film transistor;
- a pixel electrode formed on the interlayer insulating film;
- an insulating film covering at least one edge portion of the pixel electrode;
- a cathode formed on at least the pixel electrode;
- an organic compound layer formed on at least the cathode;
- a protective film formed on at least the organic compound layer;
- and
- an anode formed on at least the protective film;
- wherein the thin film transistor comprises a source region and a drain region, and the pixel electrode is electrically connected to either one of the source region or the drain region in an opening formed in the interlayer insulating film,
- wherein a mixture region is formed between the organic compound layer and the protection film, and
- wherein the organic compound layer comprises a first layer containing a first organic material and a second layer containing a second organic material, and a mixture layer including the first and second materials is provided between the first and second layers.
9 more elements
Dependencies are inferred from the claim text.