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US 2003/0116768 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorAkira Ishikawa
Life of this patent
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Abstract
Provided is a method of realizing a semiconductor device having a structure in which a sufficient light shielding property is compatible with a sufficient storage capacitance without reducing an aperture ratio. A lower light shielding film is formed on a substrate, a TFT is formed on the lower light shielding film, and an upper light shielding film is formed on the TFT via an interlayer insulating film to cover and fit the TFT. Thus, the TFT can be completely light-shielded by the lower light shielding film and the upper light shielding film and an occurrence of a photo leak current can be prevented.
Claims67
A semiconductor device comprising:
- a thin film transistor over a substrate;
- a pixel electrode electrically connected with the thin film transistor:
- an upper light shielding film between the thin film transistor and the pixel electrode;
- at least one interlayer insulating film formed over the thin film transistor;
- and
- a window formed between the pixel electrode and the substrate by removing a portion of the interlayer insulating film,
- wherein the upper light shielding film is continuously formed from a bottom surface of the window to a surface of the interlayer insulating film to cover the thin film transistor, and
- wherein the window has an opening portion formed therein.
5 more elements
A semiconductor device comprising:
- a lower light shielding film on a substrate;
- a thin film transistor over the lower light shielding film;
- a pixel electrode electrically connected with the thin film transistor;
- an upper light shielding film between the thin film transistor and the pixel electrode;
- at least one interlayer insulating film formed over the thin film transistor;
- and
- a window formed between the pixel electrode and the substrate by removing a portion of the interlayer insulating film and provided with an opening portion,
- wherein the upper light shielding film is continuously formed from a bottom surface of the window to a surface of the interlayer insulating film to cover the thin film transistor, and
- wherein an area of the window is substantially equal to that of the opening portion.
6 more elements
A semiconductor device comprising:
- a lower light shielding film on a substrate;
- a thin film transistor over the lower light shielding film;
- a pixel electrode electrically connected with the thin film transistor;
- an upper light shielding film between the thin film transistor and the pixel electrode;
- at least one interlayer insulating film formed over the thin film transistor;
- and
- a window formed between the pixel electrode and the substrate by removing a portion of the interlayer insulating film,
- wherein the upper light shielding film is continuously formed from a bottom surface of the window to a surface of the interlayer insulating film to cover the thin film transistor, and
- wherein the lower light shielding film is in contact with the upper light shielding film at the bottom surface of the window.
6 more elements
A semiconductor device comprising:
- a lower light shielding film on a substrate;
- a thin film transistor over the lower light shielding film;
- a storage capacitor element formed in parallel to the thin film transistor;
- a pixel electrode electrically connected with the thin film transistor;
- an upper light shielding film between the thin film transistor and the pixel electrode;
- at least one interlayer insulating film formed over the thin film transistor and the storage capacitor element;
- and
- a window formed between the pixel electrode and the substrate,
- wherein the lower light shielding film is in contact with the upper light shielding film at a bottom surface of the window.
6 more elements
A semiconductor device comprising:
- a thin film transistor over a substrate;
- a pixel electrode electrically connected with the thin film transistor;
- a light shielding film between the thin film transistor and the pixel electrode;
- at least one interlayer insulating film formed over the thin film transistor;
- and
- a window formed between the pixel electrode and the substrate by removing a portion of the interlayer insulating film,
- wherein the window is filled with a transparent organic insulating film for leveling, and
- wherein the light shielding film is continuously formed from a bottom surface of the window to a surface of the interlayer insulating film to cover the thin film transistor.
5 more elements
A semiconductor device comprising:
- a lower light shielding film over a substrate;
- a thin film transistor over the lower light shielding film;
- a pixel electrode electrically connected with the thin film transistor;
- a laminate body between the thin film transistor and the pixel electrode and has a plurality of upper light shielding films and a plurality of insulating films which are alternately laminated;
- at least one interlayer insulating film formed over the thin film transistor;
- and
- a window formed between the pixel electrode and the substrate by removing a portion of the interlayer insulating film,
- wherein the window is filled with a transparent organic insulating film for leveling, and
- wherein the plurality of laminated light shielding films are formed from a bottom surface of the window to cover the thin film transistor.
6 more elements
A semiconductor device comprising:
- a lower light shielding film over a substrate;
- a thin film transistor over the lower light shielding film;
- a pixel electrode electrically connected with the thin film transistor;
- a laminate body between the thin film transistor and the pixel electrode and has a plurality of upper light shielding films and a plurality of insulating films which are alternately laminated;
- at least one interlayer insulating film formed over the thin film transistor;
- and
- a window formed between the pixel electrode and the substrate by removing a portion of the interlayer insulating film,
- wherein the window is filled with a transparent organic insulating film for leveling,
- wherein the plurality of laminated light shielding films are formed from a bottom surface of the window to cover the thin film transistor, and
- wherein at least one upper light shielding film of the laminate body is electrically connected with the thin film transistor and the pixel electrode.
7 more elements
A semiconductor device comprising:
- a lower light shielding film on a substrate;
- a thin film transistor over the lower light shielding film;
- a pixel electrode electrically connected with the thin film transistor;
- a laminate body between the thin film transistor and the pixel electrode and has a plurality of upper light shielding films and a plurality of insulating films which are alternately laminated;
- at least one interlayer insulating film formed over the thin film transistor;
- and
- a window formed between the pixel electrode and the substrate by removing a portion of the interlayer insulating film,
- wherein the window is filled with a transparent organic insulating film for leveling,
- wherein the plurality of laminated light shielding films are formed from a bottom surface of the window to cover the thin film transistor, and
- wherein a storage capacitor element is formed by the plurality of insulating films and the plurality of upper light shielding films.
7 more elements
A semiconductor device comprising:
- a thin film transistor over a substrate;
- a pixel electrode electrically connected with the thin film transistor;
- a laminate body between the thin film transistor and the pixel electrode and has a plurality of upper light shielding films and a plurality of insulating films which are alternately laminated;
- at least one interlayer insulating film formed over the thin film transistor;
- a window formed between the pixel electrode and the substrate by removing a portion of the interlayer insulating film;
- and
- wherein a wiring electrically connected with the thin film transistor and the pixel electrode comprises one layer of the upper light shielding films which are formed from a bottom surface of the window to cover the thin film transistor, and
- wherein an area of the window is substantially equal to that of a region which is intended to control display in a pixel.
5 more elements
A semiconductor device comprising:
- a thin film transistor over a substrate;
- at least one interlayer insulating film formed over the thin film transistor;
- a light shielding film in contact with the interlayer insulating film, and in contact with the substrate;
- and
- a pixel electrode over the light shielding film, and electrically connected with the thin film transistor.
2 more elements
A semiconductor device comprising:
- a lower light shielding film on a substrate;
- a thin film transistor over the substrate;
- at least one interlayer insulating film formed over the thin film transistor;
- a light shielding film in contact with the interlayer insulating film, and in contact with the lower light shielding film;
- and
- a pixel electrode over the light shielding film, and electrically connected with the thin film transistor.
3 more elements
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor layer on an insulating surface;
- forming a gate insulating film on the semiconductor layer;
- forming a gate electrode on the gate insulating film;
- forming a first interlayer insulating film over the gate electrode;
- forming a second interlayer insulating film on the first interlayer insulating film;
- forming a first contact hole which reaches the semiconductor layer and forming a wiring for electrically connecting among respective thin film transistors;
- forming a third interlayer insulating film to cover the wiring;
- forming a groove which reaches a substrate between a region through which light is transmitted and a thin film transistor;
- continuously forming a light shielding film from a region located over the third interlayer insulating film to the groove;
- forming a second contact hole for connecting a pixel electrode and the wiring;
- forming a fourth interlayer insulating film on the light shielding film;
- removing a portion of the fourth interlayer insulating film formed in the second contact hole to expose the wiring;
- and
- forming the pixel electrode.
11 more elements
A method of manufacturing a semiconductor device comprising:
- forming a lower light shielding film on an insulating surface;
- forming a semiconductor layer over the insulating surface;
- forming a gate insulating film on the semiconductor layer;
- forming a gate electrode on the gate insulating film;
- forming a first interlayer insulating film over the gate electrode;
- forming a second interlayer insulating film on the first interlayer insulating film;
- forming a first contact hole which reaches the semiconductor layer and forming a wiring for electrically connecting among respective thin film transistors;
- forming a third interlayer insulating film to cover the wiring;
- removing the gate insulating film, the first interlayer insulating film, and the second interlayer insulating film in a region through which light is transmitted to form a window which reaches a substrate;
- forming an upper light shielding film on the third interlayer insulating film to cover a thin film transistor;
- removing the lower light shielding film formed on a bottom surface of the window;
- forming a second contact hole in the upper light shielding film;
- forming a fourth interlayer insulating film on the upper light shielding film;
- filling the window with a transparent insulating film for leveling;
- forming a fifth interlayer insulating film on the upper light shielding film;
- removing a portion of an insulating film filled into the second contact hole to expose the wiring;
- and
- forming a pixel electrode on the fifth interlayer insulating film.
15 more elements
A method of manufacturing a semiconductor device comprising:
- forming a lower light shielding film on an insulating surface;
- forming a semiconductor layer over the insulating surface;
- forming a gate insulating film on the semiconductor layer;
- forming a gate electrode on the gate insulating film;
- forming a first interlayer insulating film over the gate electrode;
- forming a second interlayer insulating film on the first interlayer insulating film;
- forming a first contact hole which reaches the semiconductor layer and forming a wiring for electrically connecting among respective thin film transistors;
- forming a third interlayer insulating film to cover the wiring;
- removing the gate insulating film, the first interlayer insulating film, and the second interlayer insulating film in a region through which light is transmitted to form a window which reaches a substrate;
- forming an upper first light shielding film on the third interlayer insulating film to cover a thin film transistor;
- forming a second contact hole which reaches the wiring in the upper first light shielding film and the third interlayer insulating film;
- forming a first insulating film on the upper first light shielding film;
- removing a portion of the first insulating film filled into the second contact hole to expose the wiring;
- forming an upper second light shielding film on the first insulating film;
- forming a second insulating film on the upper second light shielding film;
- forming an upper third light shielding film on the second insulating film;
- removing the lower light shielding film, the upper first light shielding film, the first insulating film, the upper second light shielding film, the second insulating film, and the upper third light shielding film, which are formed on a bottom surface of the window;
- forming a third contact hole which reaches the upper second light shielding film in the upper third light shielding film and the second insulating film;
- forming a fourth interlayer insulating film;
- filling the window with a transparent insulating film for leveling;
- forming a fifth interlayer insulating film on the upper third light shielding film;
- removing a portion of an insulating film filled into the third contact hole to expose the upper second light shielding film;
- and
- forming a pixel electrode on the fifth interlayer insulating film.
21 more elements
Dependencies are inferred from the claim text.