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US 2003/0116767 A1Published application
Edge-emitting nitride-based laser diode with P-N tunnel junction current injection
AssigneeXerox Corporation
InventorsMichael A. Kneissl, Peter Kiesel, Christian G. Van de Walle
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Abstract
A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an edge-emitting nitride based semiconductor laser structure. The amount of p-type material in the nitride based semiconductor laser structure can be minimized, with attendant advantages in electrical, thermal, and optical performance, and in fabrication.
Claims7
A semiconductor laser structure comprising:
- a substrate;
- a plurality of III-V nitride semiconductor layers formed on said substrate, at least one of said plurality of III-V nitride semiconductor layers forms an active region;
- a first semiconductor layer being p-type, a second semiconductor layer formed on said first semiconductor layer, said second semiconductor layer being n-type, tunnel junction means disposed between said first semiconductor layer and said second semiconductor layer for injecting current into said active region;
- and
- wherein a sufficient forward bias is applied to said active region to cause lasing from an edge of said semiconductor laser structure.
2 more elements
Dependencies are inferred from the claim text.