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US 2003/0116766 A1Published application
Semiconductor device and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHongyong Zhang
Life of this patent
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Abstract
A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereby the characteristics of the thin-film transistor can be made stable.
Claims1
An electro-optical device comprising:
- a substrate;
- a thin film transistor provided over said substrate;
- a silicon nitride film provided over said thin film transistor;
- a transparent organic film provided over said silicon nitride film;
- a source line connected with one of a source region and a drain region of said thin film transistor and provided on said transparent organic film;
- a pixel electrode connected with the other of said source region and said drain region and provided on said transparent organic film.
3 more elements
Dependencies are inferred from the claim text.