# US 2003/0116417 A1 · MEMS device having contact and standoff bumps and related methods > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2003/0116417 A1 - Document ID: US20030116417A1 - Status: Published application - Kind: A1 - Application number: 10/291,107 - Filed: 2002-11-08 - Published: 2003-06-26 - Earliest claimed: 2001-11-09 - Assignees: Coventor, Inc. - Inventors: Dana Richard DeReus - Web page: https://patentgrep.com/patent/US20030116417A1 ## CPC - B81B 3/0024: {Transducers for transforming thermal into mechanical energy or vice versa, e.g. thermal or bimorph actuators (electric motors using thermal effects H02N10/00)} - B81B 3/0051: {For defining the movement, i.e. structures that guide or limit the movement of an element (mechanical arrangements for preventing or damping vibration or shock H01H3/60)} - B81C 1/0015: {Cantilevers (switches using MEMS H01H1/0036; electrostatic relays using micromechanics H01H59/0009; microelectro-mechanical resonators H03H9/02244)} - H01H 59/0009: {making use of micromechanics} - H01H 61/04: wherein the thermally-sensitive member is only heated directly - H02N 1/006: {of the gap-closing type (H02N1/004 takes precedence)} - H02N 10/00: Electric motors using thermal effects {(motors using expansion or contraction of bodies due to heating or cooling F03G7/06)} - H10W 20/40: Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes - H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates} - B81B 2201/014: having a cantilever fixed on one side connected to one or more dimples - B81B 2201/018: Switches not provided for in B81B2201/014 - B81B2201/016 - B81B 2203/0118: Cantilevers - B81B 2203/04: Electrodes - B81B 2207/07: Interconnects - B81C 2201/0107: Sacrificial metal - B81C 2201/0108: Sacrificial polymer, ashing of organics - B81C 2201/0109: Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108 - H01H 1/04: Co-operating contacts of different material - H01H 1/504: {by thermal means} - H01H 2001/0042: {Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet} - H01H 2001/0063: {having electrostatic latches, i.e. the activated position is kept by electrostatic forces other than the activation force} - H01H 2001/0089: {Providing protection of elements to be released by etching of sacrificial element; Avoiding stiction problems, e.g. of movable element to substrate} - H01H 2059/0072: {with stoppers or protrusions for maintaining a gap, reducing the contact area or for preventing stiction between the movable and the fixed electrode in the attracted position} - H01H 2061/006: {Micromechanical thermal relay} - H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)} - Y10T 29/49222: forming array of contacts or terminals - B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00) - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) - H01H: ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES (contact cables H01B7/10; electrolytic self-interrupters H01G9/18; emergency protective circuit arrangements H02H; switching by electronic means without contact-making H03K17/00) - H02N: ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract MEMS Device Having Contact and Standoff Bumps and Related Methods. According to one embodiment, a movable MEMS component suspended over a substrate is provided. The component can include a structural layer having a movable electrode separated from a substrate by a gap. The component can also include at least one standoff bump attached to the structural layer and extending into the gap for preventing contact of the movable electrode with conductive material when the component moves. ## Claims ### Claim 1 A movable, MEMS component suspended over a substrate, the component comprising: (a) a structural layer having a movable electrode separated from a substrate by a gap; and (b) at least one standoff bump attached to the structural layer and extending into the gap for preventing contact of the movable electrode with conductive material when the component moves. ### Claim 2 (depends on 1) The MEMS component according to claim 1, wherein the structural layer comprises a nonconductive, resilient material. ### Claim 3 (depends on 1) The MEMS component according to claim 1, wherein the movable electrode comprises a metal material. ### Claim 4 (depends on 1) The MEMS component according to claim 1, wherein the movable electrode comprises a semiconductive material. ### Claim 5 (depends on 1) The MEMS component according to claim 1, further including an electrode interconnect attached to a side of the structural layer opposing the movable electrode and having electrical communication with the movable electrode. ### Claim 6 (depends on 5) The MEMS component according to claim 5, wherein the movable electrode and electrode interconnect have substantially equal respective coefficients of thermal expansion. ### Claim 7 (depends on 1) The MEMS component according to claim 1, wherein the at least one standoff bump comprises a nonconductive material. ### Claim 8 (depends on 1) The MEMS component according to claim 1, wherein the at least one standoff bump is attached to the movable electrode. ### Claim 9 (depends on 1) The MEMS component according to claim 1, wherein the structural layer includes at least one end fixed with respect to the substrate, and wherein the at least one standoff bump is attached to an end portion of the movable electrode distal the at least one fixed end. ### Claim 10 (depends on 1) The MEMS component according to claim 1, wherein the at least one standoff bump includes a first and second standoff bump, wherein the first standoff bump and the second standoff bump are attached to an end of the movable electrode distal the at least one fixed end. ### Claim 11 (depends on 10) The MEMS component according to claim 10, wherein the first standoff bump and the second standoff bump are positioned a substantially equal distance from the at least one fixed end. ### Claim 12 (depends on 1) The MEMS component according to claim 1, wherein the structural layer includes a movable contact for contacting a stationary contact when the movable component moves towards the stationary contact. ### Claim 13 (depends on 12) The MEMS component according to claim 12, wherein the movable contact includes at least one contact bump extending into the gap, whereby the movable contact contacts the stationary contact before the movable electrode contacts a conductive material. ### Claim 14 A MEMS device having standoff bumps, the device comprising: (a) a substrate having a stationary electrode and a first stationary contact; and (b) a movable component suspended above the substrate, the component comprising: (i) a structural layer having a movable electrode and a movable contact, wherein the movable electrode is spaced from the stationary electrode by a first gap and the movable contact is spaced from the first stationary contact by a second gap; and (ii) at least one standoff bump attached to the structural layer and extending into the first gap for preventing the contact of the movable electrode with the stationary electrode. ### Claim 15 (depends on 14) The MEMS device according to claim 14, wherein the structural layer comprises a nonconductive, resilient material. ### Claim 16 (depends on 14) The MEMS device according to claim 14, wherein the movable electrode comprises a metal material. ### Claim 17 (depends on 14) The MEMS device according to claim 14, wherein the movable electrode comprises a semiconductive material. ### Claim 18 (depends on 14) The MEMS device according to claim 14, wherein the component further includes an electrode interconnect attached to a side of the structural layer opposing the movable electrode and having electrical communication with the movable electrode. ### Claim 19 (depends on 18) The MEMS device according to claim 18, wherein the movable electrode and electrode interconnect have substantially equal respective coefficients of thermal expansion. ### Claim 20 (depends on 14) The MEMS device according to claim 14, wherein the at least one standoff bump comprises a nonconductive material. ### Claim 21 (depends on 14) The MEMS device according to claim 14, wherein the at least one standoff bump is positioned adjacent the movable electrode. ### Claim 22 (depends on 14) The MEMS device according to claim 14, wherein the at least one standoff bump is attached to the movable electrode. ### Claim 23 (depends on 14) The MEMS device according to claim 14, wherein the structural layer includes at least one end fixed with respect to the substrate, and wherein the at least one standoff bump is attached to an end portion of the movable electrode distal the at least one fixed end. ### Claim 24 (depends on 14) The MEMS device according to claim 14, wherein the at least one standoff bump includes a first and second standoff bump, wherein the first standoff bump and the second standoff bump are attached to an end of the movable electrode distal the at least one fixed end. ### Claim 25 (depends on 24) The MEMS device according to claim 24, wherein the first standoff bump and the second standoff bump are positioned a substantially equal distance from the at least one fixed end. ### Claim 26 (depends on 14) The MEMS device according to claim 14, wherein the movable contact is positioned at a distal end of the structural layer. ### Claim 27 (depends on 26) The MEMS device according to claim 26, wherein the movable electrode is positioned on the structural layer between the movable contact and at a fixed end of the structural layer. ### Claim 28 (depends on 14) The MEMS device according to claim 14, wherein the movable electrode includes a portion substantially surrounding the movable contact. ### Claim 29 (depends on 28) The MEMS device according to claim 28, wherein the at least one standoff bump is attached to the portion of the movable electrode substantially surrounding the movable contact. ### Claim 30 (depends on 14) The MEMS device according to claim 14, wherein the component further includes a contact interconnect attached to a side of the structural layer opposing the movable contact and having electrical communication with the movable contact. ### Claim 31 (depends on 14) The MEMS device according to claim 14, wherein the movable contact includes a contact bump extending into the second gap, whereby the movable contact contacts the first stationary contact before the movable electrode contacts the stationary electrode. ### Claim 32 (depends on 14) The MEMS device according to claim 14, wherein the movable contact includes a first and second set of contact bumps extending into the second gap, the substrate further includes a second stationary contact, whereby the first and second set of contact contacts the first stationary contact and the second stationary contact, respectively, before the movable electrode contacts the stationary electrode. ### Claim 33 (depends on 14) The MEMS device according to claim 14, wherein the component further includes at least one compliance cut extending into the structural layer. ### Claim 34 (depends on 14) The MEMS device according to claim 14, wherein the structural layer includes a first and second end fixed with respect to the substrate. ### Claim 35 A MEMS switch having standoff bumps, the switch comprising: (a) a substrate including a first and second stationary electrode and a stationary contact, wherein the stationary contact is positioned between the first and second stationary electrodes; (b) a structural layer including a first and second end fixed with respect to the substrate and including first, second, and third portions having bottom surfaces, the bottom surfaces suspended over the substrate; (c) a first movable electrode attached to the bottom surface of the first portion and spaced from the first stationary electrode by a first gap; (d) a first standoff bump attached to the structural layer and extending into the first gap for preventing the contact of the first movable electrode with the first stationary electrode; (e) a second movable electrode attached to the bottom surface of the second portion and spaced from the second stationary electrode by a second gap; (f) a second standoff bump attached to the structural layer and extending into the second gap for preventing the contact of the second movable electrode with the second stationary electrode; and (g) a movable contact attached to the bottom surface of the third portion and suspended over the stationary contact. ### Claim 36 (depends on 35) The switch according to claim 35, wherein the structural layer comprises a nonconductive, resilient material. ### Claim 37 (depends on 35) The switch according to claim 35, wherein the structural layer further includes: (a) a top surface opposing the bottom surface and including first, second, and third portions opposing the first, second, and third portions, respectively, of the structural layer; and (b) a first and second electrode interconnect attached to the first and second portions, respectively, of the top surface of the structural layer. ### Claim 38 (depends on 35) The switch according to claim 35, wherein the first and second standoff bumps comprise a nonconductive material. ### Claim 39 (depends on 35) The switch according to claim 35, wherein the first and second standoff bumps are attached to the first and second movable electrodes, respectively. ### Claim 40 (depends on 35) The switch according to claim 35, wherein the first and second standoff bumps are attached to portions of the first and second movable electrodes, respectively, positioned adjacent the movable contact. ### Claim 41 A MEMS switch having standoff bumps, the switch comprising: (a) a substrate having a stationary electrode and a stationary contact; (b) a movable, folded component suspended above the substrate, the component comprising: (i) a structural layer having a bottom surface and including a first and second folded beam and a cantilever attached to attachment ends of the first and second folded beams; (ii) a movable electrode separated from the substrate by a first gap; (iii) at least one standoff bump attached to the structural layer and extending into the first gap for preventing contact of the movable electrode with conductive material when the component moves toward the substrate; (iv) a movable contact spaced from the stationary contact by a second gap; and (v) at least one standoff bump attached to the structural layer and extending into the first gap for preventing the contact of the movable electrode with the stationary electrode. ### Claim 42 (depends on 41) The switch according to claim 41, wherein the at least one standoff bump is attached to the movable electrode. ### Claim 43 (depends on 41) The switch according to claim 41, wherein the at least one standoff bump is attached to the attachment ends of the first and second folded beams. ### Claim 44 A method of implementing an actuation function in a MEMS device having standoff bumps, the method comprising: (a) providing a MEMS device having standoff bumps, the device comprising: (i) a substrate having a stationary electrode; (ii) a structural layer having a movable electrode spaced from the stationary electrode by a gap; and (iii) at least one standoff bump attached to the structural layer and extending into the first gap for preventing the contact of the movable electrode with the stationary electrode when the structural layer moves towards the stationary electrode; and (b) applying a voltage between the movable electrode and the stationary electrode to electrostatically couple the movable electrode with the stationary electrode across the gap, whereby the structural layer is moved toward the substrate and the at least one standoff bump contacts the stationary electrode. ### Claim 45 A method for fabricating a movable, MEMS component having a standoff bump, comprising: (a) depositing a sacrificial layer on a conductive component; (b) forming a movable electrode on the sacrificial layer for spacing the movable electrode and the conductive material by a gap upon the removal of the sacrificial layer; (c) forming a standoff bump in the sacrificial layer whereby the standoff bump extends into the gap between the movable electrode and the conductive component; (d) depositing a structural layer on the movable electrode and the standoff bump; and (e) removing the sacrificial layer to form a gap spacing the conductive component from the movable electrode whereby the standoff bump extends into the gap for preventing contact of the movable electrode with the conductive material when the component moves. ### Claim 46 (depends on 1) The method according to claim 1, wherein the movable electrode is composed of conductive material. ### Claim 47 (depends on 1) The method according to claim 1, wherein the movable electrode is composed of semiconductive material. ### Claim 48 (depends on 1) The method according to claim 1, wherein the standoff bump is composed of a nonconductive material. ### Claim 49 A method for fabricating a MEMS device having a standoff bump, the method comprising: (a) forming a stationary electrode on a substrate; (b) depositing a sacrificial layer on the stationary electrode and the substrate; (c) forming a movable electrode on the sacrificial layer for spacing the movable electrode and the stationary electrode by a gap upon the removal of the sacrificial layer; (d) forming a standoff bump in the sacrificial layer whereby the standoff bump extends into the gap between the movable electrode and the stationary electrode formed by the removal of the sacrificial layer; (e) depositing a structural layer on the movable electrode and the standoff bump; and (f) removing the sacrificial layer to form a gap spacing the stationary electrode and the movable electrode whereby the standoff bump extends into the gap for preventing contact of the movable electrode with the conductive material when the structural layer moves towards the stationary electrode. ### Claim 50 (depends on 49) The method according to claim 49, wherein the movable electrode is composed of conductive material. ### Claim 51 (depends on 49) The method according to claim 49, wherein the movable electrode is composed of semiconductive material. ### Claim 52 (depends on 49) The method according to claim 49, wherein the standoff bump is composed of a nonconductive material. ### Claim 53 (depends on 49) The method according to claim 49, further including forming a stationary contact on the substrate. ### Claim 54 (depends on 49) The method according to claim 49, further including forming a movable contact on the sacrificial layer. ### Claim 55 (depends on 49) The method according to claim 49, wherein forming a standoff bump further includes forming the standoff bump adjacent the movable electrode.