Apparatus for chemical vapor deposition

Abstract

Disclosed is an apparatus for a chemical vapor deposition, which comprises: a reaction chamber 10 having an upper inner wall and a lower inner wall, the lower inner wall being inwardly further protruded than the upper inner wall to form a stepped portion between the lower inner wall and the upper inner wall; a wafer supporting die 50 installed within the reaction chamber 10; a gas focus ring 70 installed in the upper inner wall; a purge gas supply hole 90 installed in a bottom face of the reaction chamber 10; a gas discharge hole 80 installed in an upper portion of the lower inner wall; and a pumping line 82 for connecting the gas discharge hole 80 with a vacuum pump. This invention can prevent the process gas from being deposited on a lower portion of the reaction chamber 10. If accumulation of the gas occurs around the gas discharge hole 80, a burning phenomenon appears around the gas discharge hole 80 due to the heat of a main heater installed inside the wafer supporting die 50. At this time, the accumulation of the gas can be minimized by installing the gas discharge hole 80 on the upper portion of the lower inner wall. Further, uniform deposition of a thin film can be achieved through an assembly of the gas focus ring 70, a quartz dome 20 and a belljar heater 40 with respect to a wider area than a conventional showerhead method.

Dependencies are inferred from the claim text.