Semiconductor wafer cleaning apparatus and cleaning method using the same

A semiconductor cleaning apparatus comprising:

• a cleaning bath supplied with a cleaning solution composed of ammonium hydroxide, deionized water and ozone;
• a megasonic transducer for applying uniform megasonic power to the cleaning bath using water as a medium;
• an ozone concentration analyzer for measuring the concentration of ozone in the cleaning solution;
• pH and Eh meters for measuring the pH and Eh of the cleaning solution;
• an ammonium hydroxide addition injection port for additionally supplying ammonium hydroxide into the cleaning bath if the concentration of ammonium hydroxide in the cleaning solution decreases to less than a predetermined amount;
• a mixing tank for mixing ammonium hydroxide, deionized water and ozone in a predetermined volume ratio;
• a first filter for removing ozone bubble components in the cleaning solution supplied from the mixing tank;
• a supply pipe for supplying the cleaning solution into the cleaning bath through the first filter;
• an ammonium hydroxide tank for supplying ammonium hydroxide into the mixing tank;
• an ozone generator connected to the mixing tank and the cleaning bath, the ozone generator for supplying ozone into the mixing tank early on a cleaning process and supplying ozone into the cleaning bath after the supply of the cleaning solution into the cleaning bath is exhausted;
• a circulation pump for circulating the cleaning solution in the cleaning bath through the;
• a chiller for lowering the temperature of the cleaning solution circulated through the circulation pipe to a low temperature;
• a second filter for removing particle components of the cleaning solution supplied through the circulation pipe;
• and
• a wastewater discharging pipe for discharging the almost exhausted cleaning solution.