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US 2003/0116090 A1Published application
Apparatus and method for direct current plasma immersion ion implantation
AssigneeCity University of Hong Kong
InventorsPaul K. Chu, Dixon T.K. Kwok, Xuchu Zeng
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Abstract
An apparatus and method are disclosed for a low-pressure steady-state direct current or long-pulse mode of plasma immersion ion implantation. A conducting grid is located between the wafer stage and the supply of plasma. The supply of plasma may be controlled through a variable aperture in which is provided the conducting grid.
Claims18
Apparatus for direct current plasma ion implantation, comprising:
- (a) a vacuum chamber,
- (b) an ion/plasma source
- (c) means for supporting a target in said chamber,
- (d) means for applying an electrical potential to said target supporting means, and
- (e) a conducting grid being located between said target supporting means and said ion/plasma source dividing said chamber into two parts.
2 more elements
A method of plasma immersion ion implantation, comprising:
- (a) providing on a supporting means within a vacuum chamber a target to be implanted,
- (b) providing an ion/plasma source to said chamber,
- (c) providing a conducting grid extending across said chamber and being located between said target and said ion/plasma source,
- (d) maintaining a low pressure plasma in a space defined between said source and said grid, and
- (e) maintaining said target supporting means at an electrical potential negative relative to said grid.
2 more elements
Dependencies are inferred from the claim text.