Chamber hardware design for titanium nitride atomic layer deposition

A processing chamber, comprising;

• a chamber body;
• a support pedestal disposed within the chamber body;
• and
• a lid assembly disposed on the chamber body, the lid assembly, comprising:
• a lid plate having an upper and lower surface;
• a manifold block disposed on the upper surface having one or more cooling channels formed therein;
• one or more valves disposed on the manifold block;
• and
• a distribution plate disposed on the lower surface having a plurality of apertures and one or more openings formed there-through;
• and
• at least two isolated flow paths formed within the lid plate, manifold block, and distribution plate;
• wherein a first flow path of the at least two isolated flow paths is in fluid communication with a first valve of the one or more valves and the one or more openings and a second flow path of the at least two isolated flow paths is in fluid communication with a second valve of the one or more valves and the plurality of apertures.

A method for depositing a nitride film on a semiconductor workpiece, comprising:

• flowing a first process gas and a first purge gas into a processing chamber;
• and
• flowing a second process gas and a second purge gas into a processing chamber,
• wherein the processing chamber comprises:
• a lid plate having an upper and lower surface;
• a manifold block disposed on the upper surface having one or more cooling channels formed therein;
• one or more valves disposed on the manifold block;
• and
• a distribution plate disposed on the lower surface having a plurality of apertures and one or more openings formed there-through;
• and
• at least two isolated flow paths formed within the lid plate, manifold block, and distribution plate;
• wherein a first flow path of the at least two isolated flow paths is in fluid communication with the one or more openings and a second flow path of the at least two isolated flow paths is in fluid communication with the plurality of apertures.