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AssigneeShowa Denko K.K.
InventorsMasashi Shigeto, Kotaro Yano, Nobuyuki Nagato
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Silicon carbide single crystal is produced by allowing a silicon raw material to continuously react with a carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows. Preferably, the silicon raw material is continuously fed onto the carbon raw material placed in a reaction crucible, and the carbon raw material is maintained at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas. An apparatus used for producing the silicon carbide single crystal comprises a reaction crucible, and a seed crystal substrate disposed in the reaction crucible; and further comprises means for maintaining the carbon raw material placed in the reaction crucible at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas, and means for continuously feeding the silicon raw material onto the carbon raw material placed in the reaction crucible.
A method for producing a silicon carbide single crystal comprising allowing a silicon raw material to continuously react with a carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows.
A method for producing a silicon carbide single crystal comprising allowing a silicon raw material to react with a carbon raw material in a reaction crucible to generate reaction gas, that reaches a seed crystal substrate on which a silicon carbide single crystal grows, characterized in that the silicon raw material is continuously fed onto the carbon raw material which is maintained at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas.
An apparatus for producing a silicon carbide single crystal comprising a reaction crucible, and a seed crystal substrate disposed in the reaction crucible, on which substrate a silicon carbide single crystal grows, said apparatus further comprising means for maintaining a carbon raw material placed in the reaction crucible at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas, and means for continuously feeding a silicon raw material onto the carbon raw material placed in the reaction crucible.
Dependencies are inferred from the claim text.