Chemical mechanical polishing (CMP) apparatus with temperature control
AssigneeProMOS Technologies Inc.
InventorsMing-Cheng Yang, Jiun-Fang Wang
Life of this patent
Estimating the term…
Abstract
A chemical mechanical polishing (CMP) apparatus with temperature control. The apparatus controls circular zone temperature of the wafer. The CMP apparatus comprises a platen; a carrier holding a wafer against the platen; a guide ring disposed at the rim of the carrier to mount the wafer on the carrier; and a heater disposed in the guide ring, in the carrier, or used to heat the slurry. The temperature of the heater is set between 20° C. and 60° C. Thus, the polishing rate at the edge is improved, and the polishing difference between the edge and the center of the wafer is reduced.
Claims10
A chemical mechanical polishing (CMP) apparatus with temperature control, comprising:
- a platen;
- a carrier holding a wafer against the platen;
- a guide ring disposed at the rim of the carrier to mount the wafer on the carrier;
- and
- a heater disposed in the guide ring to heat the edge of the wafer.
A chemical mechanical polishing (CMP) apparatus with temperature control, comprising:
- a platen;
- a carrier holding a wafer against the platen;
- a guide ring disposed at the rim of the carrier to mount the wafer at the carrier;
- and
- a heater disposed in the carrier to increase the temperature of the wafer from center to edge.
A chemical mechanical polishing (CMP) apparatus with temperature control, comprising:
- a platen;
- a polishing pad on the platen;
- a slurry supplied to the polishing pad;
- a carrier holding a wafer against the platen and contact the polishing pad;
- and
- a heater for heating the slurry, such that the temperature of the slurry is increase from center to edge of the wafer.
Dependencies are inferred from the claim text.