US 2003/0114018 A1 · Method for fabricating a semiconductor component

Abstract

The present invention provides a method for fabricating a semiconductor component having a substrate (1) and a dielectric layer (70) provided on or in the substrate (1), the dielectric layer (7) being deposited in alternating self-limiting monolayer form, in the form of at least two different precursors, by means of an ALD process. There is provision for conditioning of the surface of the substrate (1) prior to the deposition of a first monolayer of a first precursor with respect to a reactive ligand of the first precursor.

Claims12

Dependent claims

Method for fabricating a semiconductor component having a substrate (1) and a dielectric layer (70) provided on or in the substrate (1), the dielectric layer (7) being deposited in alternating self-limiting monolayer form, in the form of at least two different precursors, by means of an ALD process;

characterized by the step of:
providing for conditioning of the surface of the substrate (1) prior to the deposition of a first monolayer of a first precursor with respect to a reactive ligand of the first precursor.

Dependencies are inferred from the claim text.

Facts

Application

10/180,808Filed 26 Jun 2002

Priority

DE 101 30 936.827 Jun 2001

Published

19 Jun 2003

Term ends

Not estimatedThe source records don’t support an estimate.

Classification19 codes

H10B 12/038
Making the capacitor or connections thereto: the capacitor being in a trench in the substrate
C23C 16/02
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical…
C23C 16/0245
By cleaning or etching: by etching with a plasma
C23C 16/0272
Pretreatment of the material to be coated: deposition of sub-layers, e.g. to promote the adhesion of the main coating

Method for fabricating a semiconductor component

Life of this patent

Method for fabricating a semiconductor component

Life of this patent

Abstract

Claims12