Method of dry cleaning photoresist strips after via contact etching
AssigneeHynix Semiconductor Inc.
InventorTae-Woo Jung
Life of this patent
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Abstract
Semiconductor manufacturing processes that reduce production costs as well as increase throughput by substituting the PR strip and ACT wet cleaning procedure after the via contact etching of a semiconductor with dry cleaning to be performed while removing a photoresist in a conventional PR strip apparatus. In addition, the methods can shorten waiting time and maintain consistency in the process by performing the PR strip and cleaning at the same time in the same chamber. The resultant devices have lower via contact resistance and its deviation, as compared to the conventional PR strip and ACT wet cleaning.
Claims16
A method for fabricating a semiconductor device comprising:
- a) forming an insulation layer on metal interconnection lines;
- b) forming a photoresist pattern on the insulation layer;
- c) etching the insulation layer and forming an opening through which part of the interconnection lines are exposed;
- and
- d) stripping the photoresist pattern and cleaning, wherein the stripping the photoresist and cleaning comprises:
- removing the polymers formed on the sidewalls of the opening in a PR strip apparatus;
- removing the photoresist pattern in the PR strip apparatus;
- and
- removing the residue formed on the bottom of the opening in the PR strip apparatus.
Dependencies are inferred from the claim text.