Method for forming metal wire of semiconductor device
OwnerHyun-jin Jang, Jong-yoon Yooninventors
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Abstract
A method for forming a metal wire of a semiconductor device is disclosed. The method for forming a metal wire of a semiconductor device can reduce a junction leakage current and improve the reliability of a semiconductor device by forming a silicon thin film on a silicon substrate with a contact hole before depositing a titanium film or a titanium nitride film in order to improve contact resistance caused by the increase of a dopant concentration by maximally suppressing the formation of a titanium silicide film on a junction area in the silicon substrate in the heat treatment process.
Claims10
A method for forming a metal wire of a semiconductor device, the method comprising:
- forming an interlayer insulating film on a silicon substrate with a junction area, forming a contact hole through the interlayer insulating film to expose a portion of the junction area, the contact hole having a side wall by performing an etching process on the interlayer insulating film and then forming a spacer insulating film on the side wall of the contact hole;
- sequentially forming a silicon thin film and a metal barrier layer on the spacer insulating film and the exposed portion of the junction area and then forming a titanium silicide film on the exposed portion of the junction area from portions of the silicon thin film and metal barrier layer covering the exposed portion of the junction area by performing a heat treatment process;
- and
- forming a metal layer on the metal barrier layer by a chemical vapor deposition and then forming a metal wire by patterning the metal layer.
Dependencies are inferred from the claim text.