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US 2003/0114003 A1Published application
Method of forming a mask having nitride film
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Un Kwean, Jae-Seung Hwang
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Abstract
A method of forming a mask comprises forming a mask layer including nitrogen, forming a photoresist pattern on the mask layer and etching the mask layer using a mixes gas including a first gas adapted for etching the mask layer and a second gas for increasing selectivity of the photoresist pattern, thereby forming a hard mask. In this manner, selectivity of the photoresist is improved while a high etching ratio of the nitride layer is maintained when forming a hard mask.
Claims28
A method of forming a mask, comprising:
- forming a mask layer comprising nitrogen;
- forming a photoresist pattern on the mask layer;
- and
- etching the mask layer using a mixed gas comprising a first gas adapted for etching the mask layer and a second gas adapted for increasing selectivity of the photoresist pattern, thereby forming a hard mask.
1 more element
A method of forming a mask, comprising:
- forming a first layer comprising nitrogen on a substrate;
- and
- etching the first layer comprising nitrogen using a mixed gas comprising a first gas adapted for etching the first layer and a second gas for quickening the etching of the first layer comprising nitrogen.
Dependencies are inferred from the claim text.