Method of forming metal wire of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsHyun-Jin Jang, Jong-Yoon Yoon
Life of this patent
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Abstract
A method of forming a metal wire of a semiconductor device is disclosed. The method of forming a metal wire of a semiconductor device can reduce the junction leakage current caused by the reduction of the current resistance and can improve the reliability of the semiconductor device by adding the same dopant as that of a lower junction layer on the surface of a bit line contact before the deposition of the titanium film or the titanium nitride film, in order to maximize the diffusion of the dopant in the junction area consumed through heat treatment in the formation of the titanium silicide film and improve the contact resistance caused by the increase of the concentration of the dopant existing in the junction area.
Claims22
A method of forming a metal wire of a semiconductor device comprising:
- doping a junction area of a semiconductor substrate with a first dopant;
- forming an interlayer insulating film on the junction area;
- forming a contact hole with a side wall in the interlayer insulating film to expose the junction area by etching the interlayer insulating film;
- forming a spacer insulating film on the side wall of the contact hole and doping the spacer insulating film and the junction area with said first dopant;
- forming a metal barrier layer by sequentially depositing a titanium film and a titanium nitride film on the interlayer insulating film including the contact hole;
- forming a titanium silicide film on the resultant material having the metal barrier layer;
- and
- forming a metal wire by forming a tungsten layer on the titanium nitride film and patterning the tungsten layer.
A method of forming a metal wire of a semiconductor device comprising:
- doping a junction area at a semiconductor substrate with a first dopant;
- forming an interlayer insulating film on the junction area;
- forming a contact hole with a sidewall in the interlayer insulating film to expose the junction area by etching the interlayer insulating film;
- depositing a titanium film on the interlayer insulating film including the contact hole;
- forming a spacer insulating film on the side wall of the contact hole and doping the spacer insulating film and junction area with said first dopant;
- forming a metal barrier layer by sequentially depositing a titanium nitride film on the titanium film;
- forming a titanium silicide film on the metal barrier layer;
- and
- forming a metal wire by forming a tungsten layer on the titanium nitride film and patterning the tungsten layer.
Dependencies are inferred from the claim text.