Method of producing semiconductor device
AssigneeFujitsu Limited
InventorsYoshiaki Sakamoto, Kenji Maruyama
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Abstract
A method of producing a semiconductor device in which a film is formed on a substrate by a chemical vapor deposition (CVD) process, the method comprising purifying a source gas for a film to be formed by selectively removing at least one of components contained in the source gas, which does not pertain to reactions for the deposition of the film, based on the difference in molecular size between the component to be removed and other components.
Claims16
A method of producing a semiconductor device in which a film is formed on a substrate by a chemical vapor deposition (CVD) process, the method comprising purifying a source gas for a film to be formed by selectively removing at least one of components, contained in the source gas, which does not pertain to reactions for the deposition of the film, based on the difference in molecular size between the component to be removed and other components.
12 The method of claim 10, which further comprises, after the formation of the oxide film, forming an oxide or metallic film comprising one metal element Ir, Ru and Pt by the use of an MOCVD process, which uses an organometallic material or materials for the formation of the film dissolved in an organic solvent, and feeding a source gas which is purified by selectively removing the organic solvent from a gas comprising the organometallic material or materials and the organic solvent having been vaporized.
Dependencies are inferred from the claim text.