Method of manufacturing semiconductor devices
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYasuo Yamaguchi, Kunihiro Nakamura
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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYasuo Yamaguchi, Kunihiro Nakamura
Estimating the term…
In manufacturing hermetically sealed semiconductor devices, a plurality of generally rectangular openings are first formed into a matrix pattern in a cap silicon wafer so that the plurality of generally rectangular openings are separated by a plurality of row segments extending in a first direction and a plurality of column segments extending in a second direction perpendicular to the first direction. On the other hand, a plurality of semiconductor elements each having a plurality of electrode portions are bonded to a semiconductor wafer. After each of the plurality of generally rectangular openings has been aligned with the plurality of electrode portions of at least one of the plurality of semiconductor elements, the cap wafer is bonded to the plurality of semiconductor elements.
A method of manufacturing hermetically sealed semiconductor devices, comprising:
A method of manufacturing hermetically sealed semiconductor devices, comprising:
Dependencies are inferred from the claim text.